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QZ electronic components L-Band High Power GaAs FET FLL800 FLL800IQ FLL800IQ-2C

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Shenzhen QZ Industrial Co., Ltd.Multispecialty supplier6 yrsCN

Key attributes

Industry-specific attributes

Model Number
FLL800IQ-2C
Type
Transistors
Brand Name
Original Brand
Package Type
Surface Mount

Other attributes

Mounting Type
-
Description
-
Place of Origin
Original
Package / Case
-
D/C
Newest(It is random when shipping)
Application
as the datasheet
Supplier Type
Other
Cross Reference
{-7-as the datasheet
Media Available
datasheet
Brand
FLL800IQ-2C
Current - Collector (Ic) (Max)
as the datasheet
Voltage - Collector Emitter Breakdown (Max)
as the datasheet
Vce Saturation (Max) @ Ib, Ic
as the datasheet
Current - Collector Cutoff (Max)
as the datasheet
DC Current Gain (hFE) (Min) @ Ic, Vce
as the datasheet
Power - Max
as the datasheet
Frequency - Transition
as the datasheet
Operating Temperature
as the datasheet
Mounting Type
Surface Mount
Resistor - Base (R1)
as the datasheet
Resistor - Emitter Base (R2)
as the datasheet
FET Type
as the datasheet
FET Feature
as the datasheet
Drain to Source Voltage (Vdss)
as the datasheet
Current - Continuous Drain (Id) @ 25°C
as the datasheet
Rds On (Max) @ Id, Vgs
as the datasheet
Vgs(th) (Max) @ Id
as the datasheet
Gate Charge (Qg) (Max) @ Vgs
as the datasheet
Input Capacitance (Ciss) (Max) @ Vds
as the datasheet
Frequency
as the datasheet
Current Rating (Amps)
as the datasheet
Noise Figure
as the datasheet
Power - Output
as the datasheet
Voltage - Rated
as the datasheet
Drive Voltage (Max Rds On, Min Rds On)
as the datasheet
Vgs (Max)
as the datasheet
IGBT Type
as the datasheet
Configuration
as the datasheet
Vce(on) (Max) @ Vge, Ic
as the datasheet
Input Capacitance (Cies) @ Vce
as the datasheet
Input
as the datasheet
NTC Thermistor
as the datasheet
Voltage - Breakdown (V(BR)GSS)
as the datasheet
Current - Drain (Idss) @ Vds (Vgs=0)
as the datasheet
Current Drain (Id) - Max
as the datasheet
Voltage - Cutoff (VGS off) @ Id
as the datasheet
Resistance - RDS(On)
as the datasheet
Voltage
as the datasheet
Description
L-Band High Power GaAs FET
Drain-Source Voltage
15V
Gate-Source Voltage
-5V
Total Power Dissipation
136W
Storage Temperature Range
-65℃-+175℃
Delivery Time
Ship Within 1-3 Working Day

Lead time

Quantity (pieces)1 - 500501 - 3000 > 3000
Lead time (days)46To be negotiated

Product descriptions from the supplier

3 - 100 pieces
$80.00
>= 101 pieces
$9.99

Quantity

Shipping

Shipping solutions for the selected quantity are currently unavailable
Item subtotal (0 variations 0 items)
$0.00
Shipping total
$0.00
Subtotal
$0.00

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