Description
144-148MHz 80W 136-174MHz 60W 12.5V
Type
RF MOSFET Amplifier Module
Operating Temperature
-55TO+175
Application
Power amplifier
Supplier Type
Original manufacturer, ODM, Agency, Retailer, Other
Cross Reference
TTA1943 TTC5200, NJW0302G NJW0281G, 2SA1941 2SC5198, 2SB688 2SD718, 2SB817 2SD1047, NJW21193G NJW21194G
Media Available
datasheet, Photo, EDA/CAD Models, Other
Current - Collector (Ic) (Max)
15A
Voltage - Collector Emitter Breakdown (Max)
230V
Vce Saturation (Max) @ Ib, Ic
15A230V
Current - Collector Cutoff (Max)
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
230V
Frequency - Transition
high frequency
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
230V
Current - Continuous Drain (Id) @ 25°C
15A
Drive Voltage (Max Rds On, Min Rds On)
15A
Configuration
silicon wafer
Vce(on) (Max) @ Vge, Ic
15A230V
Input Capacitance (Cies) @ Vce
15A230V
Voltage - Breakdown (V(BR)GSS)
230V
Current - Drain (Idss) @ Vds (Vgs=0)
15A
Current Drain (Id) - Max
15A
Voltage - Cutoff (VGS off) @ Id
230V
Resistance - RDS(On)
15A230V
Voltage - Offset (Vt)
230V
Current - Gate to Anode Leakage (Igao)
15A
Applications
Power amplifier