SI1062X-T1-GE3 Power MOSFET (Metal Oxide)20V Vds 8V Vgs SC89-3 220mWTransistors FETs Single FETs Discrete Semiconductor Products
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Key attributes
Industry-specific attributes
Model Number
SI1062X-T1-GE3
Type
MOSFET
Brand Name
original
Package Type
Surface Mount
Other attributes
Mounting Type
Surface Mount
Description
MOSFET N-CH 20V SC89-3
Place of Origin
original
Package / Case
SC-89 SOT-490
Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Series
SI1062X
D/C
newest
Application
General Purpose
Supplier Type
Retailer
Cross Reference
SI1062XT1GE3
Media Available
datasheet, Photo, EDA/CAD Models
Brand
Transistors
Current - Collector (Ic) (Max)
same as original
Voltage - Collector Emitter Breakdown (Max)
original standard
Vce Saturation (Max) @ Ib, Ic
same as original
Current - Collector Cutoff (Max)
original standard
DC Current Gain (hFE) (Min) @ Ic, Vce
same as original
Power - Max
220mW (Ta)
Frequency - Transition
same as original
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Resistor - Base (R1)
same as original
Resistor - Emitter Base (R2)
original standard
FET Type
N-Channel
FET Feature
same as original
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
530mA(Ta)
Rds On (Max) @ Id, Vgs
420mOhm @ 500mA 4.5V
Vgs(th) (Max) @ Id
1V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
43 pF @ 10 V
Frequency
same as original
Current Rating (Amps)
original standard
Noise Figure
same as original
Power - Output
220mW (Ta)
Voltage - Rated
same as original
Drive Voltage (Max Rds On, Min Rds On)
1.5V,4.5V
Vgs (Max)
±8V
IGBT Type
original standard
Configuration
Single
Vce(on) (Max) @ Vge, Ic
original standard
Input Capacitance (Cies) @ Vce
same as original
Input
original standard
NTC Thermistor
same as original
Voltage - Breakdown (V(BR)GSS)
original standard
Current - Drain (Idss) @ Vds (Vgs=0)
same as original
Current Drain (Id) - Max
original standard
Voltage - Cutoff (VGS off) @ Id
same as original
Resistance - RDS(On)
original standard
Voltage
same as original
Voltage - Output
original standard
Voltage - Offset (Vt)
same as original
Current - Gate to Anode Leakage (Igao)
original standard
Current - Valley (Iv)
same as original
Current - Peak
original standard
Applications
general purpose
Transistor Type
N-Channel
SPQ
3k/reel
Technology
Si
Typical Rise Time (ns)
14
Typical Fall Time (ns)
11
Typical Turn-Off Delay Time (ns)
16
Typical Turn-On Delay Time (ns)
2
Unit Weight:
0.001058 oz
PCB changed
3
Pin Count
3
Lead Shape
Flat
Packaging and delivery
Selling Units:
Single item
Single package size:
19X19X10 cm
Single gross weight:
1.000 kg
Lead time
| Quantity (pieces) | 1 - 3000 | > 3000 |
| Lead time (days) | 15 | To be negotiated |
Still deciding? Get samples first! Order sample
Samples
Maximum order quantity: 1 piece
Sample price:
$0.40/piece
Customization
Customized packaging
Min. order: 3000
For more customization details, message supplier
Product descriptions from the supplier
>= 3000 pieces
$0.40
Still deciding? Get samples first! Order sample
Samples
Maximum order quantity: 1 piece
Sample price:
$0.40/piece
Membership benefits
Quick refunds on orders under US $1,000View more
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