Mounting Type
Surface Mount
Description
MOSFET P-CH 30V 35A PPAK 1212-8
Package / Case
PowerPAK 1212-8
Operating Temperature
-55°C ~ 150°C (TJ)
Application
General Purpose
Cross Reference
SI7101DN-T1-GE3DKR
Media Available
datasheet, Photo, EDA/CAD Models
Current - Collector (Ic) (Max)
original standard
Voltage - Collector Emitter Breakdown (Max)
original standard
Vce Saturation (Max) @ Ib, Ic
original standard
Current - Collector Cutoff (Max)
original standard
DC Current Gain (hFE) (Min) @ Ic, Vce
original standard
Power - Max
3.7W(Ta)52W(Tc)
Frequency - Transition
original standard
Operating Temperature
-55°C ~ 150°C(TJ)
Mounting Type
Surface Mount
Resistor - Base (R1)
original standard
Resistor - Emitter Base (R2)
original standard
FET Feature
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
35A(Tc)
Rds On (Max) @ Id, Vgs
7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3595 pF @ 15 V
Frequency
original standard
Current Rating (Amps)
original standard
Noise Figure
original standard
Power - Output
3.7W(Ta),52W(Tc)
Voltage - Rated
original standard
Drive Voltage (Max Rds On, Min Rds On)
4.5V,10V
IGBT Type
original standard
Configuration
Single Quad Drain Triple Source
Vce(on) (Max) @ Vge, Ic
original standard
Input Capacitance (Cies) @ Vce
original standard
NTC Thermistor
original standard
Voltage - Breakdown (V(BR)GSS)
original standard
Current - Drain (Idss) @ Vds (Vgs=0)
original standard
Current Drain (Id) - Max
original standard
Voltage - Cutoff (VGS off) @ Id
original standard
Resistance - RDS(On)
original standard
Voltage - Output
original standard
Voltage - Offset (Vt)
original standard
Current - Gate to Anode Leakage (Igao)
original standard
Current - Valley (Iv)
original standard
Current - Peak
original standard
Applications
general purpose
Typical Turn-On Delay Time:
12 ns
Typical Turn-Off Delay Time:
38 ns
Forward Transconductance - Min:
44 S