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SiC wafer p type silicon epitaxial substrate Double-side polishing Semiconductor

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Key attributes

Other attributes

Place of Origin
Shanghai, China
Brand Name
XKH
Model Number
SiC substrate
Type
SiC Wafer
Material
Silicon carbide
Payment
According to customer
Application
Substrate/epitaxial
Density
3.21 G/cm3
Substrate Type
SiC Substrate
Thermal Conductivity
4.9

Packaging and delivery

Selling Units:
Single item
Single package size:
10X10X8 cm
Single gross weight:
1.000 kg

Lead time

Quantity (pieces)1 - 5 > 5
Lead time (days)60To be negotiated

Product descriptions from the supplier

Minimum order quantity: 5 pieces
$400.00 - $800.00

Variations

Total options:

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