Application
Field effect MOS transistor
Supplier Type
Original manufacturer, ODM, Agency, Retailer, Other
Cross Reference
FQA9N90, FHA9N90, 9N90, 2SK2611
Media Available
datasheet, Photo, EDA/CAD Models, Other
Brand
MOSFET NPN 900V 9A TO-3P
Current - Collector (Ic) (Max)
9A
Voltage - Collector Emitter Breakdown (Max)
900V
Vce Saturation (Max) @ Ib, Ic
9A900V
Current - Collector Cutoff (Max)
9A
DC Current Gain (hFE) (Min) @ Ic, Vce
9A900V
Frequency - Transition
high frequency
Operating Temperature
-50°C ~ 175°C
Mounting Type
Through Hole
Resistor - Base (R1)
9A900V
Resistor - Emitter Base (R2)
9A900V
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
900V
Current - Continuous Drain (Id) @ 25°C
9A
Rds On (Max) @ Id, Vgs
9A900V
Gate Charge (Qg) (Max) @ Vgs
900V
Input Capacitance (Ciss) (Max) @ Vds
9A900V
Drive Voltage (Max Rds On, Min Rds On)
900V
Configuration
Three Level Inverter - IGBT, FET
Vce(on) (Max) @ Vge, Ic
9A900V
Input Capacitance (Cies) @ Vce
9A900V
Voltage - Breakdown (V(BR)GSS)
900V
Current - Drain (Idss) @ Vds (Vgs=0)
9A
Current Drain (Id) - Max
9A
Voltage - Cutoff (VGS off) @ Id
9A900V
Resistance - RDS(On)
9A900V
Voltage - Offset (Vt)
900V
Current - Gate to Anode Leakage (Igao)
9A