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TK6A60D K6A60D TO-220 600V 6A Field Effect Transistor Silicon N Channel MOS Type MOSFET
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Key attributes
Industry-specific attributes
Model Number
TK6A60D
Type
MOSFET
Brand Name
Toshiba
Package Type
TO-220
Other attributes
Mounting Type
Through Hole, Surface Mount
Description
Field Effect Transistor Silicon N Channel MOS Type
Place of Origin
Japan
Package / Case
TO-220
Supplier Type
Agency
Media Available
datasheet
Brand
TK6A60D
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
6A
Brand
Toshiba
Drain-to-Source Voltage
600V
Drain-to-Source Voltage2
±30 V
Drain current (DC)
6A
Drain Power dissipation
40W
Single pulse avalanche energy
173mJ
Avalanche current
6A
Repetitive avalanche energy
4mJ
Packaging and delivery
Selling Units:
Single item
Single package size:
1.03X2.88X0.47 cm
Single gross weight:
0.001 kg
Lead time
| Quantity (pieces) | 1 - 1 | 2 - 2500 | 2501 - 20000 | > 20000 |
| Lead time (days) | 1 | 1 | 1 | To be negotiated |
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Samples
Maximum order quantity: 20 piece
Sample price:
$10.00/piece
Customization
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Min. order: 1
For more customization details, message supplier
Product descriptions from the supplier
1 - 2499 pieces
$2.00
2500 - 19999 pieces
$1.00
>= 20000 pieces
$0.80
Still deciding? Get samples first! Order sample
Samples
Maximum order quantity: 20 piece
Sample price:
$10.00/piece
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