TPWR8503NL L1Q transistor N-Channel MOSFET N-CH 30V 150A 8DSOP Surface Mount SOT-23-3 TO-236 Passive part Supplier

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Yunfu Hongkong Electronics Co.,Ltd.2 yrs

CN

Key attributes

Industry-specific attributes

Model Number

TPWR8503NL L1Q

Type

MOSFET

Brand Name

Original brand

Package Type

Surface Mount

Other attributes

Mounting Type

Surface Mount

Description

MOSFET N-CH 30V 150A 8DSOP

Place of Origin

Original

Package / Case

8-DSOP Advance

Type

MOSFETs

Operating Temperature

-55````150

Series

TPWR8503NL

D/C

newest

Application

General Purpose

Supplier Type

Retailer

Cross Reference

-

Media Available

datasheet, Photo

Brand

N-Channel 30 V 150A (Tc) 800mW

Current - Collector (Ic) (Max)

1.1A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

55°C ~ 150°C (TJ)

Current - Collector Cutoff (Max)

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce

200mOhm @ 1.3A, 10V

Power - Max

500mW (Ta)

Frequency - Transition

original standard

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Resistor - Base (R1)

original standard

Resistor - Emitter Base (R2)

0.85mOhm

FET Type

N-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Rds On (Max) @ Id, Vgs

0.85mOhm

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

74 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

6900 pF

Frequency

-

Current Rating (Amps)

1.1A

Noise Figure

original

Power - Output

142 W

Voltage - Rated

30 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Vgs (Max)

20 V

IGBT Type

original standard

Configuration

Single

Vce(on) (Max) @ Vge, Ic

4.5V 10V

Input Capacitance (Cies) @ Vce

6900 pF

Input

originial

NTC Thermistor

-

Voltage - Breakdown (V(BR)GSS)

na

Current - Drain (Idss) @ Vds (Vgs=0)

150 A

Current Drain (Id) - Max

original standard 150 A

Voltage - Cutoff (VGS off) @ Id

1.3 V

Resistance - RDS(On)

1 mOhms

Voltage

30 V

Voltage - Output

15 V

Voltage - Offset (Vt)

15 V

Current - Gate to Anode Leakage (Igao)

50A

Current - Valley (Iv)

-

Current - Peak

150 A

Applications

General Purpose

Transistor Type

MOSFET

MOQ

1reel

PN

TPWR8503NL,L1Q

Technology

N-Channel

Quality

100% Original 100% Brand

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30 V

Rds On (Max) @ Id, Vgs

0.85mOhm @ 50A10V

Power Dissipation (Max)

800mW (Ta), 142W (Tc)

Warranty

365days

BOM list service

YES

Packaging and delivery

Selling Units:

Single item

Single package size:

19X19X10 cm

Single gross weight:

1.000 kg

Lead time

Quantity (pieces)	1 - 5000	> 5000
Lead time (days)	5	To be negotiated

Still deciding? Get samples first! Order sample

Samples

Maximum order quantity: 10 piece

Sample price:

$2.50/piece

Customization

Customized packaging

Min. order: 5000

For more customization details, message supplier

Product descriptions from the supplier

>= 5000 pieces

$1.18

Variations

Total options:

Shipping

Still deciding? Get samples first! Order sample

Samples

Maximum order quantity: 10 piece

Sample price:

$2.50/piece

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