Description
Standard Operating Procedures
Place of Origin
Guangdong, China
Type
Reference Description
Operating Temperature
Reference Description
Application
Reference Description
Supplier Type
Original manufacturer, ODM, Agency, Retailer, Other
Cross Reference
Reference Description
Current - Collector (Ic) (Max)
Standard
Voltage - Collector Emitter Breakdown (Max)
Standard
Vce Saturation (Max) @ Ib, Ic
Standard
Current - Collector Cutoff (Max)
Standard
DC Current Gain (hFE) (Min) @ Ic, Vce
Standard
Frequency - Transition
Standard
Operating Temperature
Reference Description
Mounting Type
Surface Mount
Resistor - Base (R1)
Standard
Resistor - Emitter Base (R2)
Standard
FET Type
Reference Description
FET Feature
Reference Description
Drain to Source Voltage (Vdss)
Standard
Current - Continuous Drain (Id) @ 25°C
Standard
Rds On (Max) @ Id, Vgs
Standard
Vgs(th) (Max) @ Id
Standard
Gate Charge (Qg) (Max) @ Vgs
Standard
Input Capacitance (Ciss) (Max) @ Vds
Standard
Current Rating (Amps)
Standard
Drive Voltage (Max Rds On, Min Rds On)
Standard
IGBT Type
Reference Description
Vce(on) (Max) @ Vge, Ic
Standard
Input Capacitance (Cies) @ Vce
Standard
Voltage - Breakdown (V(BR)GSS)
Standard
Current - Drain (Idss) @ Vds (Vgs=0)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Applications
Reference Description
Transistor Type
Reference Description
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
1.8 A
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4V
Pd - Power Dissipation
2 W
Operating Temperature
- 55 C~+ 150 C
Number of Channels
1 Channel
Transistor/MOSFET IRFL9014TRPBF
