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      WJC HNYX MOSFET N-Ch 650V 11A TO220-3 CFD 440 mOhms SPP11N60CFD

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      Shenzhen Wei Jing Chuang Technology Co., Ltd.2 yrsCN
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      Key attributes

      Industry-specific attributes

      Model Number
      New and Orginal Transistor

      Type
      Transistor

      Brand Name
      HNYX

      Package Type
      -

      Other attributes

      Description
      -

      Place of Origin
      Guangdong, China

      Package / Case
      -

      D/C
      -

      Application
      -

      Supplier Type
      Original manufacturer, ODM, Agency, Retailer, Other

      Media Available
      datasheet, Photo, EDA/CAD Models, Other

      Brand
      -, Original

      Current - Collector (Ic) (Max)
      -

      Voltage - Collector Emitter Breakdown (Max)
      -

      Vce Saturation (Max) @ Ib, Ic
      -

      Current - Collector Cutoff (Max)
      -

      DC Current Gain (hFE) (Min) @ Ic, Vce
      -

      Power - Max
      -

      Frequency - Transition
      -

      Operating Temperature
      -

      Mounting Type
      -

      Resistor - Base (R1)
      -

      Resistor - Emitter Base (R2)
      -

      FET Type
      -

      FET Feature
      -

      Drain to Source Voltage (Vdss)
      -

      Current - Continuous Drain (Id) @ 25°C
      -

      Rds On (Max) @ Id, Vgs
      -

      Vgs(th) (Max) @ Id
      -

      Gate Charge (Qg) (Max) @ Vgs
      -

      Input Capacitance (Ciss) (Max) @ Vds
      -

      Frequency
      -

      Current Rating (Amps)
      -

      Noise Figure
      -

      Power - Output
      -

      Voltage - Rated
      -

      Drive Voltage (Max Rds On, Min Rds On)
      -

      Vgs (Max)
      -

      IGBT Type
      -

      Configuration
      -

      Vce(on) (Max) @ Vge, Ic
      -

      Input Capacitance (Cies) @ Vce
      -

      Input
      -

      NTC Thermistor
      -

      Voltage - Breakdown (V(BR)GSS)
      -

      Current - Drain (Idss) @ Vds (Vgs=0)
      -

      Current Drain (Id) - Max
      -

      Voltage - Cutoff (VGS off) @ Id
      -

      Resistance - RDS(On)
      -

      Voltage
      -

      Voltage - Output
      -

      Voltage - Offset (Vt)
      -

      Current - Gate to Anode Leakage (Igao)
      -

      Current - Valley (Iv)
      -

      Current - Peak
      -

      Applications
      -

      Payment
      Paypal\TT\Western Union\Trade Assurance

      Shipping by
      DHL\UPS\Fedex\EMS\HK Post

      MOQ
      1 Pcs

      Delivery Time
      1-3day

      Service
      24 Hours Online

      Quality
      High-quality

      Warranty
      1 Year

      Product Name
      Original Transistor

      Packaging and delivery

      Packaging Details
      carton paper

      Port
      ShenZhen

      Selling Units:
      Single item

      Single package size:
      15X15X5 cm

      Single gross weight:
      0.500 kg

      Supply Ability

      Supply Ability
      5000 Piece/Pieces per Day

      Show more

      Lead time

      Quantity (pieces)1 - 10001001 - 5000 > 5000
      Lead time (days)37To be negotiated
      Still deciding? Get samples first! Order sample

      Samples

      Maximum order quantity: 10 piece
      Sample price:
      $0.10/piece

      Know your supplier

      Shenzhen Wei Jing Chuang Technology Co., Ltd.
      2 yrsLocated in CN
      View more productsView profile

      Product descriptions from the supplier

      10 - 99 pieces
      $0.80
      100 - 999 pieces
      $0.55
      1000 - 2999 pieces
      $0.30
      >= 3000 pieces
      $0.11

      Variations

      Total options:
      Select now

      Shipping

      Shipping solutions for the selected quantity are currently unavailable
      Still deciding? Get samples first! Order sample

      Samples

      Maximum order quantity: 10 piece
      Sample price:
      $0.10/piece

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