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      IRF 3205 MOSFET N-CH 55V 75A TO-220AB transistor IRF3205

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      Shenzhen Futian Jiaxinda Technology Electronic Trade DepartmentMultispecialty supplier7 yrsCN
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      Key attributes

      Industry-specific attributes

      Model Number
      IRF3205PBF
      Type
      NPN
      Brand Name
      NA
      Package Type
      Throught Hole

      Other attributes

      Place of Origin
      Guangdong, China
      Package / Case
      TO-264-3, TO-264AA
      D/C
      In-Stock
      Application
      General Amplification
      Supplier Type
      Original manufacturer
      Media Available
      datasheet, Photo
      Brand
      OEM
      Current - Collector (Ic) (Max)
      15A, 15A
      Voltage - Collector Emitter Breakdown (Max)
      230V
      Vce Saturation (Max) @ Ib, Ic
      3V @ 800mA, 8A, 3V @ 800mA, 8A
      Current - Collector Cutoff (Max)
      5uA (ICBO), 5uA (ICBO)
      DC Current Gain (hFE) (Min) @ Ic, Vce
      55 @ 1A, 5V, 80 @ 1A, 5V
      Power - Max
      150W, 150W
      Frequency - Transition
      30MHz, 30MHz
      Operating Temperature
      150°C (TJ), 150°C (TJ)
      Mounting Type
      Through Hole
      Resistor - Base (R1)
      -
      Resistor - Emitter Base (R2)
      -
      FET Type
      -
      FET Feature
      Not Applicable
      Drain to Source Voltage (Vdss)
      -
      Current - Continuous Drain (Id) @ 25°C
      -
      Rds On (Max) @ Id, Vgs
      -
      Vgs(th) (Max) @ Id
      -
      Gate Charge (Qg) (Max) @ Vgs
      -
      Input Capacitance (Ciss) (Max) @ Vds
      -
      Frequency
      -
      Current Rating (Amps)
      -
      Noise Figure
      -
      Power - Output
      -
      Voltage - Rated
      -
      Drive Voltage (Max Rds On, Min Rds On)
      -
      Vce(on) (Max) @ Vge, Ic
      -
      Input Capacitance (Cies) @ Vce
      -
      Input
      -
      NTC Thermistor
      -
      Voltage - Breakdown (V(BR)GSS)
      -
      Current - Drain (Idss) @ Vds (Vgs=0)
      -
      Current Drain (Id) - Max
      -
      Voltage - Cutoff (VGS off) @ Id
      -
      Resistance - RDS(On)
      -
      Voltage
      100V
      Voltage - Output
      -
      Voltage - Offset (Vt)
      -
      Current - Gate to Anode Leakage (Igao)
      -
      Current - Valley (Iv)
      -
      Current - Peak
      -
      Applications
      PCB
      Type
      Field-Effect Transistor

      Packaging and delivery

      Packaging Details
      Original packaging
      Selling Units:
      Single item
      Single package size:
      1X1X0 cm
      Single gross weight:
      0.007 kg
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      Lead time

      Quantity (pieces)1 - 1000 > 1000
      Lead time (days)12To be negotiated

      Product descriptions from the supplier

      10 - 99 pieces
      $0.35
      100 - 999 pieces
      $0.32
      >= 1000 pieces
      $0.30

      Quantity

      Shipping

      Item subtotal (0 variations 0 items)
      $0.00
      Shipping total
      $0.00
      Subtotal
      $0.00

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