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STGW80H65DFB new and original IGBT 650V 120A 469W TO-247 GW80H65DFB
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SHENZHEN EPAMIC TECHNOLOGY CO., LIMITED
1 yr
HK
Key attributes
Industry-specific attributes
Model Number
STGW80H65DFB
Type
JFET
Brand Name
JDP/ORIGINAL Brand
Package Type
Through Hole
Other attributes
Mounting Type
Through Hole
Place of Origin
Guangdong, China
Package / Case
/
Type
Transistor
Operating Temperature
-65C + 150 C
D/C
19+ 20 +
Application
Amplifier Transistors
Supplier Type
Original manufacturer, ODM, Agency
Cross Reference
/
Media Available
datasheet, Photo, EDA/CAD Models
Brand
Transistor IGBT
Current - Collector (Ic) (Max)
25A
Voltage - Collector Emitter Breakdown (Max)
1200V
Power - Max
312W
IGBT Type
NPT
Configuration
Single
Applications
Induction Heating, UPS, AC & DC motor controls
SPQ
/
Payment
L/C,D/A,D/P,T/T,Paypal,Western Union,MoneyGram
Test Condition
400V, 80A, 10Ohm, 15V
Product Number
STGW80H65DFB
Price
contact us to get lowest price
Detailed Description
IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-247
Category
IGBT
Manufacturer
JDP/Original brand plz contact us
Base Product Number
STGW80
Current - Collector (Ic) (Max)
120 A
Packaging and delivery
Packaging Details
Carton
Port
SHENZHEN/HONG KONG
Supply Ability
Supply Ability
8000 Piece/Pieces per Week
Show more
Lead time
Quantity (pieces)
1 - 100
> 100
Lead time (days)
3
To be negotiated
Customization
Customized logo
Min. order: 100000
For more customization details,
message supplier
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SHENZHEN EPAMIC TECHNOLOGY CO., LIMITED
1 yr
Located in HK
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Product descriptions from the supplier
Minimum order quantity: 10 pieces
$3.50 - $4.00
Quantity
-
+
Shipping
Shipping solutions for the selected quantity are currently unavailable
Item subtotal (0 variations 0 items)
$0.00
Shipping total
$0.00
Subtotal
$0.00
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