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In Stock MOSFET 30V 6.8A/4.6A 8SO Transistors IRF9389 IRF9389TRPBF

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Shenzhen HYST Technology Co., Ltd.Multispecialty supplier15 yrsCN

Key attributes

Industry-specific attributes

Model Number
IRF9389TRPBF
Type
IGBT Transistor
Brand Name
Original
Package Type
Standard

Other attributes

Mounting Type
Standard
Description
MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Place of Origin
Original
Package / Case
Standard
Type
Standard
Operating Temperature
Standard
Series
Standard
D/C
2024+
Application
Standard
Supplier Type
Original manufacturer, Agency, Retailer
Cross Reference
-
Media Available
datasheet, Photo
Brand
Standard
Current - Collector (Ic) (Max)
Standard
Voltage - Collector Emitter Breakdown (Max)
Standard
Vce Saturation (Max) @ Ib, Ic
Standard
Current - Collector Cutoff (Max)
Standard
DC Current Gain (hFE) (Min) @ Ic, Vce
Standard
Power - Max
Standard
Frequency - Transition
Standard
Operating Temperature
Standard
Mounting Type
Standard
Resistor - Base (R1)
Standard
Resistor - Emitter Base (R2)
Standard
FET Type
Standard
FET Feature
Standard
Drain to Source Voltage (Vdss)
Standard
Current - Continuous Drain (Id) @ 25°C
Standard
Rds On (Max) @ Id, Vgs
Standard
Vgs(th) (Max) @ Id
Standard
Gate Charge (Qg) (Max) @ Vgs
Standard
Input Capacitance (Ciss) (Max) @ Vds
Standard
Frequency
Standard
Current Rating (Amps)
Standard
Noise Figure
Standard
Power - Output
Standard
Voltage - Rated
Standard
Drive Voltage (Max Rds On, Min Rds On)
Standard
Vgs (Max)
Standard
IGBT Type
Standard
Configuration
Standard
Vce(on) (Max) @ Vge, Ic
Standard
Input Capacitance (Cies) @ Vce
Standard
Input
Standard
NTC Thermistor
Standard
Voltage - Breakdown (V(BR)GSS)
Standard
Current - Drain (Idss) @ Vds (Vgs=0)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage
Standard
Voltage - Output
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Current - Peak
Standard
Applications
Standard
Transistor Type
Standard
Product Category:
MOSFET
Mounting Style:
SMD/SMT
Package / Case:
SOIC-8
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
2 Channel
Id - Continuous Drain Current:
6.8 A, 4.6 A
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Qg - Gate Charge:
6.8 nC, 8.1 nC
Pd - Power Dissipation:
2 W
Channel Mode:
Enhancement

Packaging and delivery

Selling Units:
Single item
Single package size:
XX cm
Single gross weight:
kg

Lead time

Quantity (pieces)1 - 1000 > 1000
Lead time (days)5To be negotiated

Product descriptions from the supplier

1 - 47999 pieces
$0.30
>= 48000 pieces
$0.10

Variations

Total options:

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