Mounting Type
Through Hole
Description
Typical on-Resistance: RDS (on) =40 Milie Ohm(typ.), High Blocking Voltage, 100% Avalanche Test, Good Stability and Uniformity with High EAS
Place of Origin
Zhejiang, China
Type
SiC MOSFET transistor
Operating Temperature
-50℃~+175℃
Application
Switch Mode Power Supplies
Supplier Type
Original manufacturer, ODM
Media Available
datasheet, Photo
Brand
AKCT40N120H 1200V SiC Power MOSFET
Current - Collector (Ic) (Max)
61A(TC=25℃), 42A(TC=100℃)
Voltage - Collector Emitter Breakdown (Max)
1225V
Current - Collector Cutoff (Max)
120A
Operating Temperature
-50°C ~ 175°C
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
61A
Rds On (Max) @ Id, Vgs
65 Milli Ohm
Gate Charge (Qg) (Max) @ Vgs
142nC
Input Capacitance (Ciss) (Max) @ Vds
2946pF
Drive Voltage (Max Rds On, Min Rds On)
2.0-4.0V
Voltage - Breakdown (V(BR)GSS)
1200V
Current - Drain (Idss) @ Vds (Vgs=0)
100uA
Current Drain (Id) - Max
61A
Resistance - RDS(On)
44 Milli Ohm
Voltage - Offset (Vt)
-10/+25v
Applications
Switch Mode Power Supplies
Transistor Type
SiC MOSFET transistor, N-Channel
Drain Current(TC=100℃)
42A
Single Pulse Avalanche Energy
300mJ
Maximum Power Dissipation(TC=25℃)
250W
Application
Switch Mode Power Supplies