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1200V 30A SiC Schottky Diode Module Isolation Type Package For Energy Storage And High Power Inverters
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Key attributes
Industry-specific attributes
Type
SiC Schottky Diode Module
Package
G1
Other attributes
Package / Case
G1
Mounting Type
through holes, screw fixation
Description
Revolutionary semiconductor material - Silicon Carbide, No reverse recovery current, Temperature independent switching behavior, Excellent thermal performance, High reliability, Isolation Type Package
Model Number
AK2CR30P120G1S
Place of Origin
Zhejiang, China
Brand Name
AIKO
Voltage
1200V
Current
30A
Configuration
2 diodes
Voltage - Isolation
2500V
Series
SiC Schottky Diode Module
Repetitive Peak Reverse Voltage
1200V
DC Blocking Voltage
1200V
Average Forward Current
30A
Non-Repetitive Forward Current
270A
Maximum Power Dissipation
500W
Isolation Voltage
2500V
Weight
300g
Diode Forward Voltage(Typ.)
2.0v@IF=30A, TJ=175℃
Total Capacitive Charge
130nC
Reverse Current
500uA@VR=1200V, TJ=175℃
Lead time
| Quantity (pieces) | 1 - 500 | 501 - 10000 | > 10000 |
| Lead time (days) | 20 | 30 | To be negotiated |
Customization
Customized logo
Min. order: 1000
Customized packaging
Min. order: 1000
Graphic customization
Min. order: 1000
For more customization details, message supplier
Product descriptions from the supplier
500 - 9999 pieces
$39.00
>= 10000 pieces
$19.00
Variations
Total options:
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