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      Hy4008W Electronic Components Supplier 80V 255A N-Channel Enhancement Mode MOSFET TO-247 HY4008W

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      Shenzhen Jingmaoyuan Electronics Co., Ltd.1 yrCN
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      Key attributes

      Industry-specific attributes

      Model Number
      HY4008W

      Type
      TRANSISTOR

      Brand Name
      HY

      Package Type
      Throught Hole

      Other attributes

      Mounting Type
      Throught Hole

      Description
      N-Channel Enhancement Mode MOSFET

      Place of Origin
      China

      Package / Case
      TO-220

      D/C
      Newest

      Application
      Inverter Systems

      Supplier Type
      Original manufacturer, ODM, Agency, Retailer

      Media Available
      datasheet, Photo, EDA/CAD Models

      Brand
      TRANSISTOR

      Voltage - Collector Emitter Breakdown (Max)
      Standard

      Vce Saturation (Max) @ Ib, Ic
      Standard

      DC Current Gain (hFE) (Min) @ Ic, Vce
      Standard

      Operating Temperature
      150°C (TJ)

      Mounting Type
      Through Hole

      Resistor - Base (R1)
      -

      Resistor - Emitter Base (R2)
      -

      FET Feature
      -

      Drain to Source Voltage (Vdss)
      Standard

      Current - Continuous Drain (Id) @ 25°C
      Standard

      Rds On (Max) @ Id, Vgs
      -

      Vgs(th) (Max) @ Id
      -

      Gate Charge (Qg) (Max) @ Vgs
      -

      Input Capacitance (Ciss) (Max) @ Vds
      -

      Frequency
      -

      Current Rating (Amps)
      -

      Noise Figure
      -

      Power - Output
      -

      Voltage - Rated
      -

      Drive Voltage (Max Rds On, Min Rds On)
      -

      Vgs (Max)
      -

      IGBT Type
      -

      Configuration
      -

      Vce(on) (Max) @ Vge, Ic
      -

      Input Capacitance (Cies) @ Vce
      -

      Input
      -

      NTC Thermistor
      -

      Voltage - Breakdown (V(BR)GSS)
      -

      Current - Drain (Idss) @ Vds (Vgs=0)
      -

      Current Drain (Id) - Max
      -

      Voltage - Cutoff (VGS off) @ Id
      -

      Resistance - RDS(On)
      -

      Voltage
      -

      Voltage - Output
      -

      Voltage - Offset (Vt)
      -

      Current - Gate to Anode Leakage (Igao)
      -

      Current - Valley (Iv)
      -

      Current - Peak
      -

      Applications
      GENERAL PURPOSE

      Transistor Type
      MOSFET

      LEAD TIME
      1-3 Working Days

      Service
      One Stop Bom Service

      Datasheet
      Please contact us!

      Inverter
      Please contact us!

      Part Number
      HY4008W

      Packaging and delivery

      Selling Units:
      Single item

      Single package size:
      2X1X0.5 cm

      Single gross weight:
      0.004 kg

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      Lead time

      Quantity (pieces)1 - 300 > 300
      Lead time (days)3To be negotiated
      Still deciding? Get samples first! Order sample

      Samples

      Maximum order quantity: 10 piece
      Sample price:
      $0.65/piece

      Customization

      Customized packaging
      Min. order: 10000
      For more customization details, message supplier

      Know your supplier

      Shenzhen Jingmaoyuan Electronics Co., Ltd.
      1 yrLocated in CN
      View more productsView profile

      Product descriptions from the supplier

      10 - 299 pieces
      $0.65
      >= 300 pieces
      $0.60

      Quantity

      Shipping

      Shipping solutions for the selected quantity are currently unavailable
      Item subtotal (0 variations 0 items)
      $0.00
      Shipping total
      $0.00
      Subtotal
      $0.00
      Still deciding? Get samples first! Order sample

      Samples

      Maximum order quantity: 10 piece
      Sample price:
      $0.65/piece

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      Quick refunds on orders under US $1,000Claim now

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