Mounting Type
Surface Mount
Description
MOSFET N-CH 60V 4A/12A TO252
Place of Origin
Texas, United States
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Operating Temperature
-55°C ~ 175°C (TJ)
Application
MOSFET N-CH 60V 4A/12A TO252
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Resistor - Emitter Base (R2)
-
FET Feature
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)
-
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
Applications
MOSFET N-CH 60V 4A/12A TO252
Power Dissipation (Max)
2.1W (Ta), 20W (Tc)
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63