Mounting Type
Surface Mount
Description
MOSFET transistor
Type
Original manufacturer ODM Agency
Operating Temperature
-55°C ~ 150°C(TJ)
Supplier Type
Original manufacturer, ODM, Agency
Media Available
datasheet, Photo, EDA/CAD Models
Current - Collector (Ic) (Max)
5.9A
Voltage - Collector Emitter Breakdown (Max)
20V
Vce Saturation (Max) @ Ib, Ic
other
Current - Collector Cutoff (Max)
other
DC Current Gain (hFE) (Min) @ Ic, Vce
other
Frequency - Transition
other
Operating Temperature
-55°C ~ 150°C(TJ)
Mounting Type
Surface Mount
Resistor - Base (R1)
other
Resistor - Emitter Base (R2)
other
FET Type
high frequency transistor
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
other
Current - Continuous Drain (Id) @ 25°C
5.9A(Ta)
Rds On (Max) @ Id, Vgs
29 ohm @ 5A4.5V
Vgs(th) (Max) @ Id
1.4V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
1.4V @ 250uA
Input Capacitance (Ciss) (Max) @ Vds
6.7 nC @ 4.5 V
Current Rating (Amps)
5.9 A
Drive Voltage (Max Rds On, Min Rds On)
2V4.5V
Vce(on) (Max) @ Vge, Ic
other
Input Capacitance (Cies) @ Vce
other
Voltage - Breakdown (V(BR)GSS)
other
Current - Drain (Idss) @ Vds (Vgs=0)
other
Current Drain (Id) - Max
other
Voltage - Cutoff (VGS off) @ Id
other
Resistance - RDS(On)
other
Voltage - Offset (Vt)
other
Current - Gate to Anode Leakage (Igao)
other
Current - Valley (Iv)
other
Transistor Type
high frequency transistor
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Place of Origin
Guangdong China