Description
XL001WP01IRC940
Place of Origin
Guangdong, China
Package Type
Surface Mount
Application
medical electronics , sensor
Supplier Type
Original manufacturer, ODM
Media Available
datasheet, Photo
Max. Forward Current
700mA
Voltage - Peak Reverse (Max)
5v
Current - Average Rectified (Io)
350mA
Voltage - Forward (Vf) (Max) @ If
1.3-1.6v@350mA
Current - Reverse Leakage @ Vr
0-10uA
Operating Temperature
255degree
Diode Configuration
one 40mil chip
Voltage - DC Reverse (Vr) (Max)
1.6v
Current - Average Rectified (Io) (per Diode)
350mA
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
30ns
Power Dissipation (Max)
1.5W
Capacitance Ratio Condition
0
Q @ Vr, F
350 @ 1.6V, 50MHz
Voltage - Zener (Nom) (Vz)
0
Description
1W high radiant power 940nm infrared diode