Place of Origin
Johor, Malaysia
Supplier Type
Original manufacturer, ODM, Agency, Retailer
Media Available
datasheet, Photo
Brand
MOSFET N-CH 600V 22A TO-220
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Resistor - Emitter Base (R2)
-
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Rds On (Max) @ Id, Vgs
165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1950pF @ 100V
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
Description
MOSFET N-CH 600V 22A TO-220
Drain to Source Voltage
600V
Vgs(th) (Max) @ Id
4V @ 250uA
Gate Charge @ Vgs
45nC @ 10V
Input Capacitance @ Vds
4V @ 250uA
Power Dissipation (Max)
205W (Tc)
Supplier Device Package
TO-220-3