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      hight quality 2 inch C plane Si doped Freestanding GaN Substrate for Bule&Green LD

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      Shanghai Ganova Electronic Information Co., Ltd.2 yrsCN

      Key attributes

      Other attributes

      Place of Origin
      China
      Brand Name
      GaNova
      Model Number
      JDCD01-001-020
      Type
      GaN Wafer
      Item
      GaN-FS-C-N-C50-SSP
      Dimensions
      50.0 ±0.3 mm
      Thickness
      400 ± 30 μm
      Orientation flat
      (1-100) ±0.1o, 12.5 ± 1 mm
      TTV
      ≤ 15 μm
      BOW
      ≤ 20 μm
      Resistivity (300K)
      ≤ 0.02 Ω.cm for N-type (Si-doped)
      Ga face surface roughness
      ≤ 0.3 nm (polished and surface treatment for epitaxy)
      N face surface roughness
      0.5 ~1.5 μm (single side polished)
      Package
      Packaged in a cleanroom in single wafer container

      Packaging and delivery

      Packaging Details
      carton
      Port
      Shanghai

      Supply Ability

      Supply Ability
      10000 Piece/Pieces per Month
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      Product descriptions from the supplier

      1 - 14 pieces
      $2,395.00
      >= 15 pieces
      $2,360.00

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