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  • 1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606
  • 1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606
  • 1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606
  • 1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606
  • 1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606
  • 1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606
1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606

1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606

  • 2 - 99 Pieces
    $1.50
  • >= 100 Pieces
    $1.20

Customization:

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1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • Power Amplification: Designed for high-performance power amplification, this transistor is essential for audio and TV applications, ensuring clear and powerful sound or image output.
  • Voltage Regulation: Capable of managing high voltage levels up to 230V, making it suitable for a variety of electronic devices.

Key features

  • 1. Advanced Material Technology

  • With semiconductor materials like silicon, the 1051 RF power transistor ensures efficient electrical conduction, enhancing the performance of electronic circuits.

  • 2. Versatile Interactive Design

  • With a standard configuration and through-hole mounting, you can easily integrate this transistor into various circuit designs, providing flexibility and adaptability.

  • 3. Superior Performance Parameters

  • With a maximum power output of 150W and a collector-emitter breakdown voltage of 230V, achieve high-performance levels suitable for demanding applications in power amplifiers and audio systems.

  • 4. Optimal Scenario Solutions

  • With its application in power amplifiers and audio systems, you can ensure reliable performance in both TV and audio amplification scenarios, making it ideal for both home and professional use.

  • 5. Industry Certification Standards

  • With compliance to industry standards for high-voltage MOSFETs and IGBTs, you can trust the safety and effectiveness of this component in your electronic designs.

Product details

1051 rf power transistor of tv mosfet igbt a473-y ms1051 k135 j50 j5027 r cep50n06 d1555 j3303 c265 bdw93c bd3931 j606

The 1051 RF power transistor is designed for high-performance applications such as TV, audio, and power amplifiers. Featuring advanced MOSFET and IGBT technologies, this transistor is ideal for high-voltage and high-power use cases, ensuring efficient and reliable performance.

Technical specifications

FeatureSpecificationBenefit
ApplicationPower Amplifier, TV, AudioVersatile for various high-power applications
ConfigurationStandardCompatible with common circuit designs
Model Number2SC5200, 2SA1943Trusted industry-standard models
Mounting TypeThrough HoleSecure and stable installation
PackingTO-264-3, TO-264AAEfficient heat dissipation
Power - Max150WHandles high power loads
Voltage - Collector Emitter Breakdown Max230VSuitable for high-voltage applications

Customization guide

Adjustable voltage and power parameters to meet specific audio amplification needs.

Get inspired

With the 1051 RF power transistor, you can elevate your audio equipment to deliver superior sound quality and reliability, making it an excellent choice for both professional and home audio systems.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Power Handling100W115W130W
Voltage Tolerance200V230V260V*
Thermal EfficiencyStandardEnhancedPremium

Supplier's note

  1. The Pro Model's enhanced voltage tolerance – 30% above the industry benchmark – allows for safer operation in high-voltage environments. Combined with its premium thermal efficiency, it ensures optimal performance and longevity in demanding applications.
  2. For audio enthusiasts, the Advanced Model offers a balanced upgrade with improved power handling and voltage tolerance, ideal for most home audio systems. Professionals seeking the highest reliability should consider the Pro Model for its superior specifications.

Frequently asked questions

  • What is the best transistor model for power amplifier applications?

  • How do I maintain the 1051 RF power transistor for optimal performance?

  • What are the advantages of using MOSFETs in audio amplifiers?

  • Can I use the 1051 RF power transistor for TV applications?

  • Is the 1051 RF power transistor available in surface-mount and through-hole configurations?

  • How does the 1051 RF power transistor compare to other transistors in terms of power management?

  • Are there customization services available for the 1051 RF power transistor?

  • Is the 1051 RF power transistor suitable for high-voltage applications?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
Power TransistorsHigh-power amplifiersPower - Max: 150W (suitable for large systems)High power handling capabilityRequires efficient heat dissipation
MOSFETsAudio equipmentVoltage - Collector Emitter Max: 230V (handles high voltage)Efficient switching at high frequenciesSusceptible to static damage
IGBTsTV circuitsMounting Type: Through Hole (easy for prototyping)Handles high voltage and currentLarger physical size
SMD TransistorsCompact devicesConfiguration: Standard (universal compatibility)Space-saving for compact designsMore challenging to replace
TriacsPower controlApplication: Power Amplifier (used in power regulation)Efficient AC power controlSensitive to voltage spikes
ResistorsGeneral electronicsPacking Type: Through Hole (durable and reliable)Stable performance over timeLimited to specific resistance values

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