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  • 2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots
  • 2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots
  • 2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots
  • 2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots
  • 2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots
2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots
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2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots

$100.00-$740.00/ Piece|1 Piece/Pieces(Min. Order)

Customization:

Customized logo（Min.Order: 100 pieces）
Customized packaging（Min.Order: 100 pieces）
Graphic customization（Min.Order: 100 pieces）
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2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • Material Composition: The product is a 2-inch high purity 4H-N Silicon Carbide Wafer, designed for advanced semiconductor applications.
  • Purpose: Utilized in the manufacturing of electronic devices, these SiC Crystal Wafers are integral to processes requiring high thermal conductivity and electric field strength.

Key features

  • 1. Advanced Material Technology

    • With high purity 4H-N Silicon Carbide, these wafers offer exceptional durability and resistance to extreme conditions, ensuring reliable performance in demanding semiconductor applications.

  • 2. Precision Interactive Design

    • With a consistent 330um thickness, these wafers provide precise substrate uniformity, essential for high-performance semiconductor device fabrication.

  • 3. Superior Performance Parameters

    • With undoped SiC material, these wafers enhance thermal conductivity and electrical efficiency, making them ideal for high-power and high-frequency applications.

  • 4. Versatile Scenario Solutions

    • With their robust design, these wafers are suitable for both research and commercial semiconductor manufacturing, offering adaptability to various technological innovations.

  • 5. Certification Standards Compliance

    • With compliance to industry standards, these SiC wafers are verified for purity and quality, supporting eco-friendly manufacturing practices and ensuring safety in electronic applications.

Product details

2 INCH HPSI High purity 4H-N Silicon Carbide Wafer Type 330um SiC Crystal Wafers Ingots

Introducing the 2 INCH HPSI High Purity 4H-N Silicon Carbide Wafer, a premium product in the semiconductor category. This SiC crystal wafer is known for its exceptional purity and is ideal for advanced electronic applications. The wafer is undoped, providing a stable and reliable substrate for various semiconductor processes.

Technical specifications

FeatureSpecificationBenefit
Material4H-N Silicon Carbide (SiC)High thermal conductivity and stability
Thickness330µmSuitable for high-frequency applications
TypeHPSI (High Purity Semi-Insulating)Low electrical conductivity for precise control

Customization guide

With our SiC wafers, you can customize the diameter and doping levels to meet specific application needs, ensuring compatibility with your unique semiconductor processes.

Get inspired

Explore the potential of our SiC wafers in next-generation electronic devices. Their superior thermal properties make them ideal for power electronics and RF applications.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Purity Level99.9%99.95%99.99%*
Thermal ConductivityStandard+15%+30%
Electrical ResistanceBase LevelEnhancedPremium

Supplier's note

The Pro model's electrical resistance is triple the industry standard, enabling precise control in high-frequency applications. When paired with its enhanced thermal conductivity, this creates an unparalleled platform for cutting-edge semiconductor devices. For research labs and high-tech manufacturing, the Pro model offers the best performance, while the Base model is suitable for educational purposes and basic applications.

Frequently asked questions

  • What is the best model of SiC crystal wafers for semiconductor applications?

  • How should I maintain and care for my SiC crystal wafers?

  • What are the advantages of using silicon carbide over silicon in semiconductor manufacturing?

  • Can I customize the size and thickness of the SiC wafers?

  • Are the SiC crystal wafers FDA-approved for use in medical devices?

  • What are the unique selling points of your 4H-N SiC crystal wafers?

  • Can your SiC wafers be used in green energy solutions?

  • Is there a warranty or quality guarantee for your SiC crystal wafers?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
SemiconductorsHigh-power electronicsHigh thermal conductivity (400 W/m·K)Efficient heat dissipation in devicesHigher cost compared to silicon
Wide bandgap (3.26 eV)Operates at higher temperatures and voltagesLimited availability of large wafers
Chemical stability (inert in harsh environments)Suitable for extreme conditionsComplex manufacturing process
Sports EquipmentOutdoor sportsDurable rubber materialWithstands rough play and weather conditionsMay not be suitable for indoor use
Vibrant color (green for visibility)Easy to spot during gameplayCan fade with prolonged sun exposure
Fitness AccessoriesYoga and stretching exercisesNon-slip surface (textured for grip)Prevents slipping during workoutsNot suitable for high-impact exercises
Lightweight design (easy to handle)Portable and easy to storeLimited durability under heavy use
ToysChildren's playNon-toxic materials (safe for children)Safe for contact with skin and mouthCan be punctured by sharp objects
Customizable options (colors and logos)Personalized for branding or preferencesAdditional cost for customization
Promotional ItemsBrand promotionCustomizable with logos and textEnhances brand visibility and recognitionRequires bulk orders for cost efficiency
Variety of sizes and weightsTailored to specific marketing needsLimited use outside promotional events

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