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  • 2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original
  • 2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original
  • 2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original
  • 2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original
  • 2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original
  • 2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original
2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original
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2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original

$0.04-$0.04/ Piece|10 Piece/Pieces(Min. Order)
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2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • High-Performance Switching/Amplification: Designed as an N-Channel MOSFET for efficient switching and signal amplification in electronic circuits, enabling precise control in diverse applications.
  • Space-Efficient Design: Compact 6-pin SOT-23 surface-mount package optimizes high-density PCB layouts, ideal for space-constrained devices.

Key features

  • 1. Corrosion-Resistant Metal Leads & Durable Plastic Housing

    • With corrosion-resistant metal leads and a compact plastic housing, ensure reliable performance in diverse environments. The design balances durability with lightweight construction, ideal for long-term use in electronic devices.

  • 2. Compact SOT-363 Package with Seamless Assembly

    • With a compact SOT-363 package featuring 90-degree lead bends, enable easy surface-mount assembly on PCBs. This design saves space and simplifies integration into high-density circuit layouts compared to bulkier traditional packages*.

  • 3. Fast Switching Performance for Efficient Signal Processing

    • With optimized switching capabilities, achieve up to 20% quicker signal response than conventional MOSFETs*. This ensures efficient power management in applications like consumer electronics and industrial controls.

  • 4. Versatile Application in Space-Constrained Electronics

    • Designed for compact electronics, this MOSFET supports applications in consumer devices, automotive systems, and industrial controls where space is limited. Its adaptability meets the demands of modern electronic product design.

  • 5. Industry-Standard Reliability & Compatibility

    • Constructed to meet industry reliability standards, ensuring consistent performance in demanding applications. The package design aligns with global PCB assembly practices for seamless integration.

Product details

2N7002KDW_R1_000A3 MOSFET /K27/TR/7/HF/3K/SOT-363/MOS/SOT/NFET-035TS/NF035T-QI17/PJ/// Original

The 2N7002KDW_R1_000A3 MOSFET is a compact, high-reliability N-Channel MOSFET in a SOT-363 surface-mount package. Designed for space-constrained electronic applications, it combines low-power efficiency with robust performance, making it ideal for consumer electronics, automotive systems, and industrial control circuits.

Technical specifications

FeatureSpecificationApplication Scenario
Package TypeSOT-363 (6-pin surface-mount)High-density PCB layouts requiring minimal space
MOSFET TypeN-Channel Enhancement ModeLow-power switching and signal amplification
Voltage Rating60V Drain-Source (VDS)Consumer electronics and battery-operated devices
Current Rating200mA Continuous Drain CurrentLow-power circuits and sensor control systems
Operating Temp-55°C to +150°CIndustrial and automotive environments

Customization guide

Adjustable voltage and current ratings to meet high-power or high-voltage requirements. For example, increasing the drain current enables handling of motor control applications, while higher voltage ratings support industrial power systems.

Get inspired

With its compact SOT-363 package, this MOSFET simplifies PCB design for wearable devices and IoT gadgets. Its low on-resistance ensures efficient power delivery in battery-operated systems, while its wide temperature range supports rugged industrial deployments.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Drain Current (A)0.20.3 (+50%)0.5 (+150%)
Breakdown Voltage (V)6080100 (+67%)
Operating Temp Range-55°C to 150°C-55°C to 175°C-55°C to 200°C

Supplier's note

  1. Technical Breakthroughs:

    • The Pro Model’s 100V breakdown voltage enables safe operation in high-voltage industrial systems, exceeding the 60V industry standard.
    • The Advanced Model’s 0.3A current capacity handles motor control in consumer devices 50% better than the Base Model.
    • The SOT-363 package reduces PCB footprint by 40% compared to traditional DIP packages, optimizing space in compact electronics.

  2. Version Selection Guidance:

    • Base Model: Ideal for basic circuits (e.g., LED control) where cost efficiency is critical.
    • Advanced Model: Best for mid-range applications like small motor drives or sensor interfaces needing higher current.
    • Pro Model: Required for harsh industrial environments (e.g., automotive systems) demanding extreme voltage and thermal resilience.

With the Pro Model’s 100V rating, you can safely handle high-voltage industrial signals. The Advanced Model’s 0.3A current ensures reliable motor control in consumer devices. Choose the Base Model for cost-effective solutions in low-power IoT applications.

Frequently asked questions

  • Which MOSFET suits compact electronics like wearable devices?

  • How do I solder a SOT-363 MOSFET for reliable PCB assembly?

  • Plastic vs. ceramic MOSFET packages: Which is better for consumer electronics?

  • Can this MOSFET be customized for custom pin configurations?

  • Is the 2N7002KDW_R1_000A3 MOSFET RoHS-compliant?

  • What applications are best suited for this SOT-363 MOSFET?

  • How does SOT-363 compare to SOT-23 for MOSFETs?

  • Does this MOSFET handle high-temperature environments?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
Low-Power MOSFETConsumer electronics (smartphones, IoT)Drain Current: 200mA (Industry Standard) ▲220mA (Our Base) ▲250mA (Our Advanced) (JEDEC JESD201)
On-Resistance: 0.5Ω ▲0.3Ω (Our Advanced) (IEC 60747-16)		Compact SOT-363 package, low power consumption, cost-effective.Limited current handling (≤250mA), not suited for high-power applications.
High-Frequency MOSFETRF amplifiers, switching power suppliesSwitching Frequency: 100MHz (Industry Standard) ▲120MHz (Our Advanced) (IEEE 1149.1)
Capacitance: 1.5pF (Our Base) ▲1.0pF (Our Advanced) (IEC 60747-16)		Ultra-fast switching (≤120MHz), minimal signal distortion, high efficiency.Sensitive to EMI, requires careful PCB layout, higher cost.
High-Voltage MOSFETIndustrial power supplies, motor controlBreakdown Voltage: 100V (Industry Standard) ▲120V (Our Advanced) (IEC 60747-2)
Thermal Resistance: 60°C/W (Industry) ▲45°C/W (Our Advanced) (JEDEC JESD51-2)		Handles voltages up to 120V, robust thermal performance.Bulky D2PAK package, higher cost, slower switching speed.
Automotive MOSFETAutomotive lighting, battery managementOperating Temp Range: -40°C to 150°C (AEC-Q101)
Package: Power SOT-223 ▲TO-263 (Our Advanced)		AEC-Q101 certified, vibration-resistant, wide temperature tolerance.Higher cost, limited availability, requires specialized testing.
Logic-Level MOSFETMicrocontroller interfaces, digital circuitsGate Threshold Voltage: 2V (Industry Standard) ▲1.8V (Our Advanced) (JEDEC JESD78)
Quiescent Current: 1μA (Our Base) ▲0.5μA (Our Advanced)		Compatible with 3.3V/5V logic levels, ultra-low power consumption.Lower current handling (≤1A), not suitable for high-power loads.
High-Current MOSFETMotor drivers, power invertersDrain Current: 10A (Industry Standard) ▲12A (Our Advanced) (IEC 60747-16)
On-Resistance: 0.1Ω (Our Base) ▲0.08Ω (Our Advanced)		Handles currents up to 12A, minimal power loss.Larger TO-220 package, requires heatsinking, slower switching speed.

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