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Discrete Semiconductors
Transistors
  • 2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879
  • 2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879
  • 2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879
  • 2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879
  • 2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879
  • 2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879
2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879

2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879

  • 1 - 99 Pieces
    $0.99
  • >= 100 Pieces
    $0.09

Customization:

Customized logo（Min.Order: 100000000 pieces）
View product details

2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • High-Frequency Amplification: The Toshiba 2SC2879 transistor is designed for high-frequency applications, providing reliable performance in amplifiers, oscillators, and switching circuits.
  • Efficient Heat Dissipation: The TO-3P package design ensures effective heat management, crucial for maintaining optimal performance and longevity.

Key features

  • 1. Advanced Material Technology

    • With gold-plated leads, the Toshiba 2SC2879 transistor ensures superior electrical conductivity and corrosion resistance, making it a reliable choice for long-term use.

  • 2. Efficient Interactive Design

    • With its TO-3P package design, the transistor offers easy mounting and connection, facilitating seamless integration into various electronic circuits.

  • 3. High Performance Parameters

    • With its capability to handle high-frequency applications, the 2SC2879 transistor delivers exceptional stability and performance, ideal for audio and RF amplifiers.

  • 4. Versatile Scenario Solutions

    • With its robust design, the transistor is suitable for applications requiring continuous operation, such as in commercial audio systems and RF amplifiers.

  • 5. Reliable Certification Standards

    • With its ceramic base, known for high thermal conductivity, the transistor ensures efficient heat dissipation, enhancing longevity and reliability in demanding environments.

Product details

2SC2879 New Original Electronic component High Frequency Rf Power Transistors 2SC 2879 2SC2879A 2SC2879

The Toshiba 2SC2879 is a high-frequency RF power transistor designed for various electronic applications, including amplifiers and oscillators. This component is known for its reliability, performance, and versatility, featuring a robust TO-3P package with gold-plated leads and a ceramic base.

Technical specifications

FeatureSpecificationBenefit
MaterialCeramic baseProvides stable and reliable foundation
LeadsGold-platedEnsures excellent conductivity and corrosion resistance
ConfigurationPNPSuitable for high-frequency applications
PackageTO-3PAllows efficient heat dissipation

Customization guide

Adjustable parameters include the transistor's configuration and package type to meet specific circuit requirements and ensure optimal performance in various applications.

Get inspired

With the Toshiba 2SC2879, you can enhance the performance and reliability of your electronic devices, ensuring high-frequency stability and efficient heat management.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Frequency RangeStandard+15%+30%*
Power HandlingBase SpecEnhancedPremium

Supplier's note

The Pro version's high-frequency capability – 30% above the industry standard – ensures exceptional performance in demanding RF applications. When paired with its ceramic base, this creates a reliable solution for engineers seeking enhanced stability and heat dissipation. Choose the Pro Model for advanced engineering projects requiring maximum efficiency and reliability.

Frequently asked questions

  • Which transistor model is best for high-frequency RF amplifiers?

  • How do I maintain the performance of a 2SC2879 transistor?

  • What are the advantages of the ceramic base in the 2SC2879 transistor?

  • Can the 2SC2879 transistor be customized for different applications?

  • Is the 2SC2879 transistor suitable for low-power applications?

  • How does the gold-plated lead enhance the 2SC2879 transistor's performance?

  • What makes the 2SC2879 transistor a preferred choice for electronic hobbyists?

  • How does the Toshiba 2SC2879 ensure reliable operation in RF circuits?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
TransistorsHigh-frequency circuitsBJT, PNP configuration, TO-3P packageHigh stability and reliabilityRequires careful heat management
AmplifiersAudio and RF amplifiersHigh thermal conductivity ceramic baseEfficient heat dissipationLimited to moderate power levels
OscillatorsSignal generationGold-plated leadsImproved conductivity and corrosion resistanceMight need additional components for customization
Switching CircuitsPower regulationSymmetrical lead designEasy mounting and connectionMay require specific mounting hardware
Electronic DevicesVersatile applications2SC2879 model with high-frequency capabilitySuitable for various electronic usesPotential for overheating if improperly used
RF ComponentsRadio frequency systemsDesigned for high-frequency stability and performanceReliable for RF applicationsLimited to specific frequency ranges

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