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  • AWL5905 RF Power Amplifier IC Integrated circuits 5905
  • AWL5905 RF Power Amplifier IC Integrated circuits 5905
  • AWL5905 RF Power Amplifier IC Integrated circuits 5905
  • AWL5905 RF Power Amplifier IC Integrated circuits 5905
  • AWL5905 RF Power Amplifier IC Integrated circuits 5905
  • AWL5905 RF Power Amplifier IC Integrated circuits 5905
AWL5905 RF Power Amplifier IC Integrated circuits 5905

AWL5905 RF Power Amplifier IC Integrated circuits 5905

$1.17-$1.30/ Piece|1 Piece/Pieces(Min. Order)

Customization:

Customized packaging（Min.Order: 10000 pieces）
View product details

AWL5905 RF Power Amplifier IC Integrated circuits 5905

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • RF Power Amplification: The AWL5905 IC is designed to amplify radio frequency (RF) signals with high efficiency, leveraging MOSFET output technology for optimal performance in high-frequency applications.
  • Thermal Management: The QFN package ensures efficient heat dissipation through its ceramic substrate and metal lid, enabling stable operation in power-intensive scenarios like 5G, Wi-Fi, and IoT devices.

Key features

  • 1. Material Technology

    • With a ceramic substrate and metal lid in the QFN package, you can achieve superior thermal conductivity and mechanical durability, ensuring reliable performance in high-heat environments. ~20% smaller footprint than traditional SOP packages*

  • 2. Interactive Design

    • With surface-mount technology (SMT), you can streamline manufacturing processes using reflow soldering, enabling faster assembly compared to through-hole components. ~30% faster assembly time*

  • 3. Performance Parameters

    • With MOSFET output design, you can deliver high-power RF amplification with minimal power loss, enhancing efficiency in wireless communication systems. Up to 30% lower power loss than bipolar transistor-based solutions*

  • 4. Scenario Solutions

    • Designed for high-density PCB applications, this IC allows for compact circuit designs ideal for space-constrained devices like smartphones or IoT modules. Supports 40% higher component density than through-hole alternatives*

  • 5. Certification Standards

    • Complies with industry-standard packaging specifications for surface-mount components, ensuring compatibility with global manufacturing practices. Certification details subject to manufacturer’s confirmation.

Product details

AWL5905 RF Power Amplifier IC Integrated circuits 5905

The AWL5905 RF Power Amplifier IC is a high-performance surface-mount QFN-packaged integrated circuit designed for space-constrained, high-density PCB applications. Leveraging MOSFET output technology and advanced thermal management, it delivers efficient power amplification for RF systems in 5G, IoT, and wireless communication devices.

Technical specifications

FeatureSpecificationBenefit
Package TypeQuad Flat No-Lead (QFN)Reduced footprint; ideal for high-density PCBs
Mounting TypeSurface Mount Technology (SMT)Streamlined reflow soldering; space-saving
Output TypeMOSFETHigh-power handling with low distortion
MaterialCeramic substrate + Metal lidEnhanced thermal conductivity
Thermal Resistance≤0.5°C/W (typical)Efficient heat dissipation for stable operation

Customization guide

  • Adjustable Package Dimensions: Optimize QFN size (3x3mm to 5x5mm) to match PCB layout constraints.
  • Material Tweaks: Customize ceramic/metal ratios for improved thermal performance in high-heat scenarios.
  • MOSFET Parameter Tuning: Tailor voltage/current ratings (e.g., 28V/3A to 50V/5A) for specific power requirements.

Get inspired

With its compact QFN design and MOSFET architecture, the AWL5905 enables sleek, high-performance RF modules for wearable devices or automotive radar systems. Its thermal efficiency ensures reliability even under continuous power loads.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Thermal Resistance0.5°C/W0.42°C/W (+15%)0.35°C/W (+30%)
Max Power Output10W12W (Enhanced)15W (Premium)
Frequency Range1-2GHz1-3GHz1-6GHz

Supplier's note

  1. Technical Breakthroughs:

    • The QFN package’s ceramic/metal composite reduces thermal resistance by 40% vs. traditional plastic QFNs.
    • MOSFET design enables 20% lower power loss compared to bipolars in RF applications.
    • Customizable markings streamline traceability in mass production.

  2. Version Selection Guide:

    • Base Model: Ideal for basic IoT sensors or low-power 2.4GHz systems (e.g., Bluetooth modules).
    • Advanced Model: Targets mid-range 5G small cells or automotive telematics requiring 3GHz operation.
    • Pro Model: Optimized for high-frequency radar systems (e.g., ADAS) or base stations needing 6GHz+ support.

With the Pro’s MOSFET and 0.35°C/W thermal resistance, you can achieve 15W output in 5G base stations—30% higher than industry benchmarks. Pair its 6GHz capability with low thermal drift to ensure stable performance in harsh industrial environments.

Frequently asked questions

  • Which RF Power Amplifier IC is best suited for high-density PCB designs?

  • How does the QFN package of the AWL5905 compare to other IC packaging types?

  • Is the AWL5905 suitable for high-temperature applications like power management systems?

  • Can the AWL5905’s markings be customized for batch tracking?

  • What applications benefit from the MOSFET output type of the AWL5905?

  • Is the AWL5905 compliant with industry standards like RoHS?

  • How does the QFN package reduce PCB assembly costs?

  • Can the QFN package thickness be adjusted for specific PCB designs?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
QFN Package ICsHigh-density PCBs, thermal-sensitive appsCeramic substrate (150 W/m·K ▲) vs plastic (0.2 W/m·K) (50x better thermal conductivity)Excellent heat dissipation, compact sizeHigher cost, requires precise soldering
Through-Hole ICsPrototyping, vibration-prone devicesPlastic/metal cases with leads (0.2 W/m·K)Easier manual assembly, robustLarger footprint, less thermal efficiency
Surface Mount TechnologyMass production, automated assembly0.5mm pitch ▲ vs industry 1.27mm (50% smaller spacing)Space-saving, cost-effective at scaleRequires precise manufacturing
MOSFET Output ICsHigh-power RF, power suppliesRds(on) 0.1Ω ▲ vs typical 0.2Ω (50% lower resistance)High efficiency, fast switchingSensitive to voltage spikes
Thermal ManagementHigh-heat environmentsCeramic substrate (150 W/m·K ▲) vs plastic (0.2 W/m·K)Stable performance under loadHigher material cost
Customization OptionsOEM/ODM projectsAdjustable thickness (0.5-1.2mm ▲) vs fixed 1mm industry standardTailored solutions, traceabilityLonger lead times

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