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Discrete Semiconductors
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  • BLF188XRSU RF power mosfet transistors SOT539B BLF188
  • BLF188XRSU RF power mosfet transistors SOT539B BLF188
  • BLF188XRSU RF power mosfet transistors SOT539B BLF188
  • BLF188XRSU RF power mosfet transistors SOT539B BLF188
  • BLF188XRSU RF power mosfet transistors SOT539B BLF188
  • BLF188XRSU RF power mosfet transistors SOT539B BLF188
BLF188XRSU RF power mosfet transistors SOT539B BLF188

BLF188XRSU RF power mosfet transistors SOT539B BLF188

  • >= 1 Pieces
    $120

Customization:

Customized packaging（Min.Order: 10000 pieces）
View product details

BLF188XRSU RF power mosfet transistors SOT539B BLF188

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • High-Power Handling: Designed to handle high power and high frequencies, ideal for RF and microwave applications.
  • Efficient Design: Features a ceramic body for excellent thermal conductivity and electrical insulation, enhancing performance and longevity.

Key features

  • 1. Advanced Material Technology

    • With a ceramic and composite body, the BLF188XRSU RF power MOSFET transistor ensures excellent thermal conductivity and electrical insulation, crucial for maintaining performance and longevity in high-power applications.

  • 2. High-Performance Parameters

    • With the capability to handle high power and frequencies, the BLF188XRSU is designed for demanding RF and microwave applications, providing reliable performance in amplifiers, mixers, or oscillators.

  • 3. Interactive Design

    • With gold-colored metal contacts designed for easy soldering onto circuit boards, ensure efficient electrical connectivity and thermal dissipation, enhancing the module's operational efficiency.

  • 4. Versatile Scenario Solutions

    • With customizable power ratings and frequency ranges, the BLF188XRSU is adaptable for specific high-efficiency and high-reliability applications in electronic systems requiring significant electrical power.

  • 5. Certification and Standards

    • With a design optimized for surface mount technology, the BLF188XRSU meets industry standards for high-power semiconductor components, ensuring compatibility and ease of integration into existing systems.

Product details

BLF188XRSU RF power mosfet transistors SOT539B BLF188

The BLF188XRSU RF power MOSFET transistor is a high-performance electronic component designed for high-power and high-frequency applications. Ideal for use in RF or microwave frequency ranges, this module combines a robust ceramic body with gold-colored metal contacts for optimal electrical performance and thermal management.

Technical specifications

FeatureSpecificationBenefit
MaterialCeramic/CompositeSuperior thermal conductivity and insulation
StyleRectangularEfficient space utilization on circuit boards
Mounting TypeSurface MountSimplifies integration into existing systems
CapabilitiesHigh Power/FrequencyIdeal for RF amplifiers, mixers, or oscillators

Customization guide

Adjustable power rating and frequency range to meet specific application needs, providing flexibility for custom electronic designs.

Get inspired

With this semiconductor module, you can enhance the performance and reliability of your high-frequency electronic systems. Its design ensures consistent operation under demanding conditions, making it suitable for advanced RF applications.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Power Rating100W+15%+30%*
Frequency Range1GHzEnhancedPremium

Supplier's note

The ceramic material's thermal management capabilities significantly enhance the module's longevity, ensuring stable performance in high-power applications. The Pro version's frequency range, exceeding industry standards by 30%, enables unparalleled versatility in RF systems. Its advanced thermal management allows for consistent operation, even under extreme conditions, providing a significant edge over traditional models. When selecting the optimal version, consider the specific demands of your application to harness the full potential of this high-frequency semiconductor.

Frequently asked questions

  • Which model of RF power transistor is best suited for high-frequency applications?

  • How should I maintain and care for my BLF188XRSU RF power mosfet transistor?

  • What are the advantages of using ceramic material in RF power transistors like the BLF188XRSU?

  • Can I customize the BLF188XRSU RF power mosfet transistor to suit specific power ratings?

  • Is the BLF188XRSU RF power mosfet transistor suitable for FDA-approved applications?

  • How does the BLF188XRSU RF power mosfet transistor compare to other mosfet transistors like the p7nk80zfp?

  • Does the BLF188XRSU RF power mosfet transistor support surface mount technology?

  • What unique features does the BLF188XRSU RF power mosfet transistor offer for high-end electronic systems?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
RF TransistorsHigh-frequency applicationsHigh power handling capabilityEfficient for RF amplificationRequires precise thermal management
MOSFETsPower conversion circuitsSurface mount (compact design)Space-saving for circuit boardsLimited power handling in compact form
AmplifiersCommunication systemsHigh gain and bandwidthEnhances signal strength significantlyCan introduce noise if not well-designed
MixersSignal processingFrequency conversion capabilityEssential for RF signal manipulationComplexity in design and integration
OscillatorsTiming and signal generationStable frequency outputProvides precise timing controlSusceptible to temperature variations
Ceramic ModulesHigh-power applicationsExcellent thermal and electrical insulationMaintains performance under stressHigher cost due to specialized materials

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