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CRG75T60AK3HD CRG75T60AK3SD 12nf Original Insulated Gate Bipolar Transistor IGBT Module G75T60AK3HD G75T60AK3SD CRMICRO

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • High Power Switching: The CRG75T60AK3HD MOSFET is designed for efficient switching of high currents and voltages, making it ideal for power electronics.
  • Precise Gate Control: Features a gate pin for precise on/off control, essential for efficient operation in power circuits.

Key features

  • 1. Advanced Material Technology

  • With a robust ceramic or plastic body, this MOSFET ensures excellent thermal conductivity and mechanical strength, ideal for high-power applications.

  • 2. Precise Interactive Design

  • With a dedicated gate pin, you can achieve precise control of the device's on/off state, enhancing efficiency in power circuits.

  • 3. Superior Performance Parameters

  • With the ability to handle high currents and voltages, ensure optimal performance in applications requiring significant power output.

  • 4. Effective Scenario Solutions

  • With a TO-247 package, efficiently manage thermal loads, making it suitable for continuous operation in commercial power electronics systems.

  • 5. Reliable Certification Standards

  • With design features that support high thermal and mechanical stress resistance, this MOSFET offers reliability across diverse operational conditions. *Disclaimer: Specifications are subject to the manufacturer’s confirmation.

Product details

CRG75T60AK3HD CRG75T60AK3SD 12nf Original Insulated Gate Bipolar Transistor IGBT Module  G75T60AK3HD G75T60AK3SD CRMICRO

The CRG75T60AK3HD and CRG75T60AK3SD are original insulated gate bipolar transistor (IGBT) modules designed for high-efficiency switching applications. These discrete semiconductors are ideal for power electronics, offering robust performance in high-power scenarios. Packaged in a through-hole configuration, they ensure easy mounting and reliable operation.

Technical specifications

FeatureSpecificationBenefit
TypeIGBT ModuleEfficient high-power switching
ConfigurationSingle SwitchSimplified circuit design
Mounting TypeThrough HoleEasy installation and maintenance
ApplicationSwitchingOptimal for power conversion systems

Customization guide

Adjustable switching parameters to meet specific power requirements, ensuring compatibility with various electronic systems.

Get inspired

With the CRG75T60AK3HD and CRG75T60AK3SD, you can achieve superior performance in power electronics applications. Their robust design is perfect for industries requiring reliable and efficient power conversion solutions.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Power HandlingStandard+15%+30%*
Thermal ManagementBasicEnhancedPremium

Supplier's note

The CRG75T60AK3HD's high power handling capability marks a significant breakthrough in the efficient management of high-current environments, enabling superior performance in industrial applications. Its advanced thermal management system prolongs device life and enhances reliability.

Guide users to optimal version selection based on power requirements: The Pro version's enhanced thermal management is ideal for high-demand applications, ensuring stable performance even under intense conditions. When paired with its robust design, this creates unmatched efficiency and reliability for power electronics professionals.

Frequently asked questions

  • Which model suits high-power electronics applications?

  • How can I ensure proper maintenance for my MOSFET power device?

  • What are the advantages of using ceramic packaging in power MOSFETs?

  • Can I customize my MOSFET for specific power electronics systems?

  • Is the MOSFET material FDA-approved for electronic applications?

  • How does the TO-247 package enhance thermal management?

  • What makes the CRYSTAL MOSFET suitable for switching applications?

  • Can I use the CRYSTAL MOSFET in discrete semiconductor applications?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
MOSFETHigh-power applicationsTO-247 package (efficient thermal management)High efficiency in switching (minimizes power loss)Limited customization options
IGBT ModuleSwitching applicationsSingle switch configuration (precise control)High power handling (supports large currents)Requires careful thermal management
Power TransistorPower electronics systemsCeramic body (good thermal conductivity)Reliable operation under stress (durable design)Can be bulky compared to alternatives
Discrete SemiconductorsCustom power suppliesThrough-hole mounting (easy installation)Versatile use in various circuits (flexibility)Potentially higher cost
Semiconductor DeviceInvertersBlack body color (absorbs heat efficiently)Enhanced thermal stability (cool surface temperature)Limited to specific applications
High-Efficiency TransistorHigh-current circuitsGate control (precise switching capability)Reliable performance in demanding conditionsComplex integration in circuits

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