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Discrete Semiconductors
Transistors
  • High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet
  • High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet
  • High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet
  • High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet
  • High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet
  • High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet
High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet
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High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet

  • 10 - 999 Pieces
    $0.05
  • 1000 - 2499 Pieces
    $0.04
  • >= 2500 Pieces
    $0.03
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High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • High-Efficiency Power Amplification: Designed for use in power amplifiers, this IGBT MOSFET IC transistor delivers efficient power conversion and amplification, ideal for RF transistor driver applications.
  • Surface Mount Technology: The compact TO-252 package offers efficient space utilization, enabling integration into high-density circuit boards.

Key features

  • 1. Advanced Material Technology

    • With a robust ceramic or plastic SMT package, the High-Efficiency IGBT MOSFET IC Transistor ensures durability and reliability in high-temperature environments.

  • 2. Interactive Design

    • With its compact Surface Mount Technology (SMT) package, you can easily integrate this transistor into densely populated circuit boards, optimizing space and functionality.

  • 3. Superior Performance Parameters

    • With high-efficiency MOSFET technology, achieve optimal power amplification and RF transistor driving capabilities, ensuring efficient energy use and performance.

  • 4. Versatile Scenario Solutions

    • With its capability to handle high temperatures and mechanical stresses, this transistor is ideal for both consumer electronics and industrial applications, offering reliable performance in diverse settings.

  • 5. Certification Standards

    • With the AGM marking, you are assured of high-quality, well-engineered components, although explanations are subject to the manufacturer’s confirmation.

Product details

High-Efficiency IGBT MOSFET IC Transistor for Power Amplifier and RF Transistor Driver TO-252 30V AGM318D Mosfet

The High-Efficiency IGBT MOSFET IC Transistor AGM318D is designed for power amplifiers and RF transistor drivers, featuring a TO-252 package for optimal performance. This component is ideal for applications requiring high efficiency and compact design, such as power amplifiers and RF circuits.

Technical specifications

FeatureSpecificationBenefit
MaterialRobust Ceramic/PlasticWithstands high temperatures during soldering
Mounting TypeSurface MountSpace-efficient for densely populated boards
Package TypeTO-252Compact and reliable for various applications
ApplicationPower Amplifier, RFEnhances performance in amplifying circuits

Customization guide

Adjustable voltage ratings and current handling capabilities to meet specific performance needs. Custom solutions available for different functionalities such as amplification or signal processing.

Get inspired

Explore the potential of the AGM318D in your power amplifier and RF applications. With its high efficiency and compact design, this component is ready to enhance the performance of your electronic devices.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Efficiency85%[+15%][+30%]*
Voltage Rating30V35V40V
Current Capacity10A12A15A

Supplier's note

The AGM318D series marks three significant technical breakthroughs:

  1. Enhanced compact design with SMT package increases board space efficiency by 20% over traditional models.
  2. Advanced thermal management allows operation in high-temperature environments, ensuring reliability.
  3. Superior material quality offers robust performance, reducing failure rates in critical applications.

Guide users to optimal version selection: The Pro Model, with its heightened voltage and current handling, is ideal for high-demand industrial applications, while the Base Model offers an economical solution for standard uses. With the Pro version's enhanced thermal management, ensure durability in harsh environments.

Frequently asked questions

  • Which model of the High-Efficiency IGBT MOSFET IC Transistor is best for small RF applications?

  • How should I maintain the AGM318D MOSFET Transistor for optimal performance?

  • What are the benefits of using a High-Efficiency MOSFET Driver in power amplifiers?

  • Can the AGM318D MOSFET Transistor be customized for specific electronic applications?

  • Is the AGM318D MOSFET Transistor's material suitable for high-temperature environments?

  • What makes the AGM318D MOSFET Transistor stand out in terms of quality?

  • How does the TO-252 package benefit the AGM318D MOSFET Transistor's performance?

  • Are datasheets available for the AGM318D MOSFET Transistor?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
High-Efficiency TransistorsPower Amplifiers, RF Transistor Drivers30V IGBT MOSFET (handles 30V current effectively)High efficiency in power amplificationLimited to certain voltage ranges
Surface Mount TransistorsCompact ElectronicsSurface Mount Technology (SMT) Package (space-saving)Ideal for densely populated circuit boardsRequires precise soldering techniques
Customizable ICsVersatile Electronic SystemsAGM Marking (indicates high-quality manufacturing)Reliable and well-engineered componentsCustomization may increase cost
High-Temperature ICsIndustrial EquipmentWithstands High Temperatures (suitable for harsh environments)Robust and reliable under stressMay require additional cooling solutions
Compact AmplifiersConsumer Electronics, AutomotiveSmall Form Factor (easy integration)Suitable for limited space environmentsMay have limited power handling capabilities
High-Density AssembliesModern ElectronicsHigh-Density Assembly Capability (compact design)Efficient use of space in circuit designPotential challenges in heat dissipation

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