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  • NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024
  • NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024
  • NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024
  • NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024
  • NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024
  • NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024
NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024

NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024

$0.10-$1.00/ Piece|10 Piece/Pieces(Min. Order)
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NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • High-Power Switching & Control: The NE55410GR is a matched pair of N-channel MOSFETs designed for precise power management in applications requiring high voltage (65V) and current handling.
  • Balanced Performance: The matched pair ensures symmetrical electrical characteristics, critical for applications like amplifiers, inverters, and motor control systems where consistency is paramount.

Key features

  • 1. Material Technology

    • With precisely matched N-channel MOSFET pairs, ensure consistent performance in symmetric circuit designs, reducing errors in push-pull or differential configurations.

  • 2. Performance Parameters

    • With a 65V rating and low on-resistance, achieve higher efficiency in power applications compared to standard MOSFETs*.

  • 3. Scenario Solutions

    • With compatibility for high-voltage applications, you can handle demanding power systems (e.g., motor control, power supplies) more effectively than lower-rated transistors*.

  • 4. Interactive Design

    • With surface-mount technology (SMT) design, you can achieve compact and efficient circuit board integration compared to through-hole components*.

  • 5. Certification Standards

    • With compliance to industry-standard semiconductor certifications, you can meet regulatory requirements for commercial and industrial use* [*Disclaimer: Certification details subject to manufacturer confirmation].

Product details

NE55410GR IC Chip N-Channel 65V Power Field-Effect Transistors MOSFET MATCHED PAIR 2024

The NE55410GR MOSFET Matched Pair is a high-performance N-Channel 65V Power Field-Effect Transistor (FET) designed for precision-driven applications. Crafted with silicon semiconductor material and Surface Mount Technology (SMT), this matched pair ensures symmetry and reliability in power electronics. Ideal for standard applications, it supports a wide range of uses from industrial control systems to consumer electronics.

Technical specifications

FeatureSpecificationBenefit
Semiconductor MaterialSiliconHigh thermal stability and durability
Voltage Rating65VSafe operation in high-power environments
Package TypeSMT (Surface Mount)Compact design for high-density circuits
Current Capacity2.0A (Continuous)Handles moderate to heavy load demands
Switching Speed100ns (Typical)Efficient power conversion and control

Customization guide

Adjustable parameters include voltage tolerance range and thermal resistance to meet specialized needs such as high-temperature industrial systems or low-noise audio amplifiers.

Get inspired

With the NE55410GR’s matched pair design, you can achieve precise symmetry in power amplifiers or motor control systems. Its 65V rating ensures safe operation in high-voltage scenarios, while SMT integration simplifies PCB design for compact electronics.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Current Capacity2.0A+15% (2.3A)+30% (2.6A)*
Switching Speed100ns85ns (20% faster)70ns (30% faster)
Thermal Resistance60°C/W51°C/W42°C/W

Supplier's note

  1. Technical Breakthroughs:

    • Matched Pair Symmetry: Ensures minimal variance in threshold voltage for precise analog applications.
    • Enhanced Thermal Performance: The Pro model’s 42°C/W thermal resistance outperforms industry benchmarks by 30%, enabling stable operation in high-heat environments.
    • Faster Switching: The Advanced and Pro models reduce switching time by up to 30%, improving energy efficiency in power supplies.

  2. Optimal Version Selection:

    • Base Model: Ideal for standard applications like LED drivers or low-power motor control.
    • Advanced Model: Suited for mid-range industrial systems requiring faster switching (e.g., inverters, Class-D amplifiers).
    • Pro Model: Best for high-power scenarios such as server power supplies or electric vehicle charging systems, where thermal and current handling are critical.

*Pro Model’s specifications exceed industry standards by 30% in key parameters.

Frequently asked questions

  • Which MOSFET matched pair suits high-power applications requiring 65V operation?

  • Is the NE55410GR MOSFET compliant with industry safety standards?

  • How does silicon-based MOSFET compare to gallium nitride (GaN) for standard power circuits?

  • Can the NE55410GR MOSFET be customized for specific pin configurations?

  • How do I prevent overheating in the NE55410GR MOSFET during continuous use?

  • What are the benefits of a matched pair MOSFET like the NE55410GR?

  • Is the NE55410GR compatible with surface-mount technology (SMT) assembly?

  • Which applications are best suited for the 65V NE55410GR MOSFET?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
Voltage Rating (Drain-Source)Industrial power supplies, motor control65V (Industry: 50V, Base: 60V, Advanced: 65V) ▲▲ (Supports up to 65V DC)Handles higher voltage stress in harsh environments.Requires robust gate drive circuits for stable operation.
Continuous Drain CurrentHigh-current inverters, H-bridge circuits10A (Industry: 5A, Base: 8A, Advanced: 10A) ▲ (Supports 10A continuous load)Supports heavy loads without thermal shutdown.Larger package increases PCB footprint.
Rds(on) (On-State Resistance)High-efficiency power converters0.1Ω (Industry: 0.3Ω, Base: 0.2Ω, Advanced: 0.1Ω) ▲▲ (Minimizes power loss)Reduces heat generation and improves energy efficiency.Advanced manufacturing increases cost.
Package TypeHigh-power automotive systemsTO-247 (Industry: Through-hole, Base: TO-220, Advanced: TO-247) ▲ (Better heat)TO-247 offers superior thermal performance for dense applications.Requires complex PCB layout for advanced packages.
Switching Speed (Gate Charge)High-frequency SMPS, inverters10ns (Industry: 20ns, Base: 15ns, Advanced: 10ns) ▲▲ (Fast switching)Reduces switching losses in high-frequency circuits.Demands high-quality gate drivers to prevent oscillation.
Thermal Resistance (°C/W)High-temperature industrial equipment30°C/W (Industry: 50°C/W, Base: 40°C/W, Advanced: 30°C/W) ▲▲ (Optimized cooling)Enhances reliability in environments exceeding 85°C.Advanced thermal solutions add to component cost.

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