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Introducing the Power IGBT Transistor MOSFET Diode SCRs, specifically the IRFB3207ZPBF series. Ideal for amplifiers and power conversion applications, these transistors are designed to handle high currents and voltages effectively with the TO-220 standard package.
| Feature | Specification | Benefit |
|---|---|---|
| Package Type | TO-220 | Efficient heat dissipation |
| Material | Silicon with aluminum/copper heat sink | High performance and reliability |
| Mounting Type | Through hole | Secure installation and robust connectivity |
| Application | Amplifier | Enhanced sound amplification capabilities |
Adjustable current and voltage ratings to meet specific power requirements for various applications. Choose different configurations for optimized performance.
With our power transistors, you can achieve superior performance in your amplifier systems, ensuring reliable and efficient operation in high-demand environments.
| Parameter | Base Model | Advanced Model | Pro Model |
|---|---|---|---|
| Power Handling | 100W | 115W (+15%) | 130W (+30%)* |
| Heat Dissipation | Standard | Enhanced | Premium |
Our most significant breakthroughs include increased power handling capabilities, improved heat dissipation features, and robust materials for long-term reliability. The Pro version's enhanced heat dissipation rating enables safe operation in high-power scenarios, ensuring longevity and performance. When paired with its silicon material properties, this creates unmatched reliability for demanding applications.
Guide users to optimal version selection based on their specific needs. For those requiring maximum power handling and superior heat management, the Pro Model is recommended. Ideal for professionals in high-demand industries looking for top-tier performance and reliability.
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The comparison data is based on manufacturer information and industry standards. Actual results may vary depending on individual use cases. It is advisable to verify details with the supplier for the most accurate information.
