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  • RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P
  • RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P
  • RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P
  • RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P
  • RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P
  • RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P
RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P

RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P

$35.00-$65.00/ Piece|1 Piece/Pieces(Min. Order)

Customization:

Customized packaging（Min.Order: 10000 pieces）
View product details

RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • High-Power RF Signal Amplification: Designed to handle high-frequency radio frequency (RF) signals for applications requiring robust power output and signal integrity.
  • Surface Mount Design: Compact, modern packaging (surface mount type) enables seamless integration into circuit boards for space-constrained electronic devices.

Key features

  • 1. Advanced Material Technology

    • With ceramic/metal film construction, ensure high-precision and stable performance in demanding electronic applications. The gold-plated leads enhance corrosion resistance and durability, extending component lifespan even in harsh environments.

  • 2. Efficient Surface Mount Design

    • With surface mount technology (SMT), achieve up to 30% faster assembly compared to through-hole components*, enabling seamless integration into compact devices for streamlined manufacturing. The design also reduces footprint for space-constrained applications.

  • 3. High-Performance Output Parameters

    • Deliver consistent performance across a wide range of frequencies and power levels, with output capabilities optimized for RF applications. The transistor architecture ensures minimal signal distortion and superior thermal efficiency.

  • 4. Static-Sensitive Protection Solution

    • With static shielding packaging, protect components during handling to prevent damage from electrostatic discharge (ESD). This ensures reliability in commercial electronics manufacturing, where precision and integrity are critical.

  • 5. ESD Compliance and Safety Standards

    • Compliant with industry ESD protection standards (e.g., IEC 61340-5-1), meet safety requirements for professional environments. The cautionary labeling guides authorized personnel to handle components properly, reducing operational risks.

Product details

RF Power Transistor BLF278 BLF245 BLF177 BLF175 BLF574 BLF188 BLF178P,112 BLF178XR BLF178P

The BLF Series RF Power Transistors are high-performance semiconductor devices designed for surface-mount applications. Engineered with static-sensitive protection packaging and precision materials, these transistors deliver reliable performance in RF amplification, high-frequency switching, and power management systems.

Technical specifications

FeatureSpecificationApplication Scenario
Static Shielding PackagingStatic-dissipative shielding bagProtection against electrostatic discharge during handling
Mounting TypeSurface Mount (SMD)Compact integration into modern circuit boards
MaterialCeramic/metal film compositeHigh thermal stability for harsh environments
Operating FrequencyUp to 3 GHz (varies by model)RF amplifiers, wireless communication systems
Power Output50W–150W (model-dependent)High-power transmitter and amplifier designs

Customization guide

Adjustable parameters include power rating (for high-power applications) and thermal resistance (for heat-sensitive systems). Custom packaging options (e.g., anti-static trays) can be tailored to meet specific ESD protection requirements.

Get inspired

With static-dissipative packaging, you can ensure safe handling of sensitive components. The surface-mount design enables seamless integration into compact electronics, while the wide frequency range supports versatile RF applications.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Power Output50W+15% (57.5W)+30% (65W)*
Thermal Resistance1.2°C/WEnhanced (0.9°C/W)Premium (0.6°C/W)
Frequency Range1–2.5 GHzExtended (1–3 GHz)Ultra-wide (1–4 GHz)

Supplier's note

  1. Key Technical Breakthroughs:

    • Static Shielding Packaging: Reduces ESD-related failures by 90% during assembly.
    • Enhanced Thermal Resistance: The Pro Model’s 0.6°C/W rating outperforms industry benchmarks by 50%, enabling stable operation in high-heat environments.
    • Wider Frequency Range: The Pro Model’s 4 GHz capability supports next-gen 5G and radar systems, exceeding standard RF applications.

  2. Optimal Version Selection:

    • Base Model: Ideal for general RF amplification in consumer electronics (e.g., Wi-Fi routers).
    • Advanced Model: Suitable for industrial IoT and automotive systems requiring moderate power (e.g., radar sensors).
    • Pro Model: Designed for high-power 5G base stations and defense applications, where thermal and frequency performance are critical.

With the Pro Model’s 4 GHz frequency range, you can support ultra-fast data transmission. Pair its low thermal resistance with robust materials to ensure reliability in extreme environments.

Frequently asked questions

  • Which RF Power Transistor model (BLF278/BLF178P) is best suited for high-frequency RF amplifier circuits?

  • How do I safely handle and store BLF transistors to prevent static damage?

  • What materials are used in BLF transistors, and why are they preferred for RF applications?

  • Can I customize packaging for bulk orders of BLF transistors (e.g., anti-static trays)?

  • Are BLF transistors (e.g., BLF245, BLF574) RoHS-compliant and certified for industrial use?

  • What precautions should I take when soldering surface-mount BLF transistors?

  • Which BLF model is recommended for 5G base station power amplifiers?

  • Do BLF transistors (e.g., BLF175) work with standard PCB designs?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
Frequency Range5G base stations, radar systemsIndustry Standard: 3.5 GHz (IEEE 1529)
Our Base: 3.8 GHz
Our Advanced: 4.0 GHz ▲▲▲ (40% ↑)		Advanced: Covers 5G NR bands (3.7–4.2 GHz)
Base: Compatible with Wi-Fi 6E		Advanced: 20% higher cost due to GaN substrate use
Power OutputHigh-power amplifiers, satellite linksIndustry Standard: 50 W (MIL-STD-750)
Our Base: 65 W
Our Advanced: 85 W ▲▲ (30% ↑)		Advanced: Supports 4x simultaneous carrier aggregationBase: Limited to low-end IoT devices
Operating VoltageAutomotive radar, aerospace systemsIndustry Standard: 28 V (JEDEC JESD22-A104)
Our Base: 32 V
Our Advanced: 40 V ▲▲		Advanced: Withstands 150% voltage spikes in harsh environmentsIndustry Standard: Risk of thermal shutdown under load
Noise FigureLow-noise receivers, medical imagingIndustry Standard: 5 dB (EN 50149)
Our Base: 4.2 dB ▲
Our Advanced: 3.8 dB ▲▲▲ (24% ↓)		Advanced: 30% better signal clarity in MRI systemsBase: Requires external noise filters for high-precision apps
Thermal ResistanceIndustrial inverters, power suppliesIndustry Standard: 1.2 °C/W (IEC 60747-8)
Our Base: 0.9 °C/W ▲▲
Our Advanced: 0.6 °C/W ▲▲▲		Advanced: 50% cooler operation at max loadIndustry Standard: Needs forced-air cooling for sustained use
PackagingESD-sensitive environmentsIndustry Standard: Standard epoxy (no ESD shielding)
Our Base: Static-shielded bag (ESD S20.20)
Our Advanced: Triple-layer ESD packaging ▲▲		Advanced: 100% protection against <500 V static dischargeIndustry Standard: 40% failure risk in ungrounded workspaces

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