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  • Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry
  • Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry
  • Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry
  • Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry
  • Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry
  • Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry
Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry

Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry

$100.00-$1000.00/ Set|1 Set/Sets(Min. Order)

Customization:

Customized logo（Min.Order: 10 pieces）
Customized packaging（Min.Order: 10 pieces）
Graphic customization（Min.Order: 10 pieces）
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Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • Heat Distribution & Wafer Support: Designed to uniformly support monocrystalline silicon wafers during semiconductor epitaxy processes, ensuring precise temperature control and crystal growth.
  • Chemical Inertness: Made of high-purity graphite, it withstands extreme temperatures and reactive gases without compromising semiconductor purity.

Key features

  • 1. Material Technology: High-Purity Graphite Construction

    • With corrosion-resistant and high-thermal-conductivity graphite material, ensure卓越的热传导和耐腐蚀性 compared to quartz susceptors*. This enables stable performance in harsh semiconductor manufacturing environments.

  • 2. Performance Parameters: Superior Thermal Efficiency

    • With exceptional thermal conductivity, achieve up to 20% faster heat transfer than traditional quartz susceptors*, reducing epitaxy process times and improving productivity.

  • 3. Scenario Solutions: Precision for Semiconductor Epitaxy

    • Designed specifically for semiconductor epitaxy processes, maintain uniform temperature distribution across silicon wafers to enhance crystal quality and reduce defects during monocrystalline growth.

  • 4. Certification Standards: SEMI-Compliant Quality

    • Complies with SEMI S2 safety standards for semiconductor equipment, ensuring reliability and compatibility with industry-grade manufacturing requirements.

  • 5. Interactive Design: Modular Adaptability

    • With a precision-engineered surface and modular design, easily integrate into existing semiconductor processing systems for seamless operation and multi-wafer handling capabilities.

Product details

Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor for Semiconductor Industry

The Semiconductor Epitaxy Slice Monocrystalline Silicon Epitaxial Susceptor is a precision-engineered graphite component designed for high-temperature semiconductor manufacturing processes. Its durable, high-purity graphite construction and seven precisely machined indentations ensure reliable wafer handling and uniform heat distribution. Optimized for industrial applications, this susceptor enhances process efficiency and material integrity in epitaxy, CVD, and annealing systems.

Technical specifications

FeatureSpecificationApplication Scenario
Material CompositionHigh-purity graphite (99.9% purity)Semiconductor epitaxy processes requiring inert environments
Thermal StabilityWithstands 1600°C (Base), 1840°C (Adv), 2080°C (Pro)High-temperature annealing in semiconductor furnaces
Indentation Design7 precisely machined circular indentationsSecurely holding silicon wafers (150–300mm) during epitaxy
Chemical ResistanceInert to reactive gases (silane, ammonia)CVD/PECVD processes with aggressive chemistries
Surface FinishMirror-smooth polished surfaceEnsuring uniform heat distribution and minimal wafer distortion

Customization guide

Adjustable parameters include indentation size/depth for wafer diameter compatibility (150–300mm), custom coatings (e.g., boron nitride) for enhanced thermal/electrical properties, and material thickness adjustments for specific thermal load requirements.

Get inspired

With its seven indentation design, this susceptor optimizes throughput in high-volume semiconductor manufacturing. The mirror-smooth surface reduces thermal gradients, ensuring uniform epitaxial layer growth critical for device performance.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Thermal Stability1600°C+15% (1840°C)+30% (2080°C)*
Load Capacity5kgEnhanced (8kg)Premium (12kg)
Surface FinishStandard polishPrecision polishMirror finish
Chemical ResistanceIndustry standard+20%Triple industry standard

Supplier's note

  1. Technical Breakthroughs:

    • Thermal Stability: The Pro Model’s 2080°C rating enables new high-temperature processes, such as ultra-pure epitaxy layer formation.
    • Chemical Resistance: Triple industry-standard inertness (Pro Model) safely handles aggressive gases like silane, reducing contamination risks.
    • Surface Finish: Mirror-smooth surfaces (Pro Model) reduce wafer distortion by 30%, enhancing device yield.

  2. Version Selection Guidance:

    • Base Model: Ideal for standard semiconductor processes requiring basic thermal and chemical resistance.
    • Advanced Model: Suited for high-throughput facilities needing 20% higher load capacity and enhanced thermal stability.
    • Pro Model: Recommended for cutting-edge R&D or extreme environments (e.g., silane-based CVD). With its triple chemical resistance and mirror finish, it ensures flawless epitaxial layer growth even under aggressive conditions.

*Pro Model thermal stability exceeds industry benchmarks by 30% due to advanced graphite compounding.

Frequently asked questions

  • Which semiconductor epitaxy susceptors are best suited for high-temperature industrial applications?

  • How do I clean and maintain a graphite semiconductor susceptor after use?

  • Why choose graphite susceptors over ceramic alternatives for semiconductor manufacturing?

  • Can semiconductor susceptors be customized for specific epitaxy chamber dimensions?

  • Are your graphite susceptors SEMI-compliant for semiconductor industry use?

  • What is the maximum temperature rating for graphite susceptors in epitaxy processes?

  • How does graphite material reduce contamination in semiconductor manufacturing?

  • Do you provide coating options to improve susceptor performance in reactive environments?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
Material CompositionHigh-purity semiconductor manufacturingIndustry Standard: 99% graphite (ISO 1450)
Our Base: 99.5% ▲ (ISO 1450)
Our Advanced: 99.9% ▲▲ (ISO 1450)		Minimizes impurities in silicon epitaxy; Base/Advanced reduce defects by 15%/30%Advanced versions require specialized handling and higher costs due to purification
Thermal ConductivityRapid thermal cycling in epitaxy chambersIndustry: 120 W/m·K (ASTM E1461)
Base: 130 W/m·K ▲ (ASTM E1461)
Advanced: 150 W/m·K ▲▲ (ASTM E1461)		Faster heat transfer improves process efficiency (up to 20% faster cooldown)Higher conductivity increases energy demand for cooling systems
Chemical ResistanceExposure to reactive gases (e.g., CVD)Industry: Resists 10 chemicals (ASTM D543)
Base: 20 chemicals ▲ (ASTM D543)
Advanced: 30 chemicals ▲▲ (ASTM D543)		Extended service life in corrosive environments (e.g., HF, NH₃ exposure)Enhanced coatings may add 10–15% to production costs
Thermal Shock ResistanceFrequent temperature changes (e.g., RTP)Industry: Withstands 500°C ΔT (ASTM C693)
Base: 600°C ▲ (ASTM C693)
Advanced: 700°C ▲▲ (ASTM C693)		Reduced cracking risk in rapid thermal processing (RTP) cyclesAdvanced designs may require thicker, heavier substrates for stability
Surface FinishPrecision silicon epitaxyIndustry: Ra 0.8 µm (ISO 4287)
Base: Ra 0.5 µm ▲ (ISO 4287)
Advanced: Ra 0.3 µm ▲▲ (ISO 4287)		Smoother surfaces enhance film uniformity (≤5% thickness variation)Finer finishes may be more prone to micro-scratches during handling
Dimensional StabilityHigh-precision alignment systemsIndustry: CTE 4.5 ppm/°C (ASTM E834)
Base: 3.8 ppm/°C ▲ (ASTM E834)
Advanced: 3.0 ppm/°C ▲▲ (ASTM E834)		Minimizes expansion/contraction errors (e.g., ±0.001 mm at 1000°C)Lower CTE materials may exhibit brittleness under mechanical stress

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