Schottky Diode (SS34/SK34 - Base) | Power supplies, low-voltage circuits | Forward Voltage: 0.3V (reduces power loss by 50% vs silicon diodes) Reverse Recovery: 10 ns (enables 1 MHz switching) | Low power loss, fast switching, compact surface-mount design | Lower reverse voltage (20V max), higher leakage current (~1 µA at 25°C) |
Advanced Schottky Diode (Our Advanced) | Industrial power supplies, higher voltage apps | Forward Voltage: 0.3V ▲ Reverse Recovery: 5 ns ▲ (enables 2 MHz switching) Reverse Voltage: 40V ▲ (double base version) | Handles higher voltages, faster switching, improved thermal performance | Slightly higher cost, larger footprint for heat dissipation |
Traditional Silicon Diode (Industry Standard) | General circuits, low-frequency apps | Forward Voltage: 0.7V (higher power loss) Reverse Recovery: 50 ns (limited to 20 kHz) | Lower cost, higher reverse voltage (100V), robust for harsh environments | Slower switching, significant power loss (~30% more than Schottky) |
Fast Recovery Diode | Switching power supplies, motor controls | Forward Voltage: 0.6V Reverse Recovery: 20 ns (400 kHz operation) | Faster than silicon, moderate cost-benefit balance | Moderate power loss, slower than Schottky, limited to mid-frequency apps |
Power Diode | High-power inverters, rectifiers | Reverse Voltage: 600V High current capability (100A) | Handles extreme power loads, durable for industrial use | Bulky packaging, slow switching (100 ns), inefficient at high frequencies |
Ultra-Fast Recovery Diode | High-frequency inverters, RF applications | Reverse Recovery: 5 ns (5 MHz operation) Forward Voltage: 0.4V | Extremely fast switching, minimal power loss at high frequencies | High cost, limited voltage rating (60V max), sensitive to thermal stress |