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  • S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument
  • S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument
  • S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument
  • S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument
  • S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument
  • S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument
S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument
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S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument

  • >= 1 Pieces
    $71.50

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Customized logo（Min.Order: 5 pieces）
Customized packaging（Min.Order: 5 pieces）
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S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • Low-Light Signal Detection: Designed to amplify weak optical signals through the avalanche effect, enabling precise measurements in low-light environments.
  • High-Sensitivity Photodiode: Converts light (650 nm wavelength) into electrical signals with minimal noise (55 pA reverse current), ideal for demanding analytical instruments.

Key features

  • 1. Material Technology

    • With silicon material, achieve high sensitivity in visible and near-infrared spectra—up to 30% higher than germanium-based sensors*—for accurate low-light detection. The protective blue plastic packaging ensures durability and shields against moisture and mechanical damage during storage and transport.

  • 2. Interactive Design

    • With standard mounting and amplifier configurations, integrate seamlessly into existing systems 20% faster than custom solutions*, enabling quick setup for optical communication and sensor applications.

  • 3. Performance Parameters

    • With a low reverse current of 55 pA at 25°C, ensure a 40% lower noise floor compared to traditional photodiodes* for precise measurements in low-light environments. The 160 V breakdown voltage guarantees stable operation under high-voltage conditions.

  • 4. Scenario Solutions

    • Optimized for 650 nm wavelength, this APD delivers 25% higher efficiency in red light detection* than broader-spectrum devices, making it ideal for optical communication systems, industrial sensors, and low-light measurement instruments.

  • 5. Certification Standards

    • Complies with industry standards for optical sensors*, ensuring reliability in regulated environments.

Product details

S12053-02 Silicon Photoelectric Sensor Transceiver Avalanche Photodiode for Low Light Measurement Analysis Instrument

The Transceiver Avalanche Photodiode S12053-02 is a high-sensitivity silicon photoelectric sensor designed for low-light measurement applications. With a 650 nm wavelength optimization and 160 V breakdown voltage, it delivers reliable signal detection in optical communication systems, sensors, and analytical instruments. Its 55 pA reverse current ensures minimal noise interference, while the blue plastic packaging safeguards against environmental degradation.

Technical specifications

FeatureSpecificationBenefit
Type NumberSi2053-02Standard model for 650 nm applications
Breakdown Voltage160 VEnables stable operation under high voltage
Reverse Current55 pA @ 25°CUltra-low leakage for high-sensitivity use
Wavelength650 nmOptimized for red-light detection tasks
MaterialSiliconHigh signal-to-noise ratio in visible/NIR
Mounting TypeStandardEasy integration into existing systems

Customization guide

Adjustable parameters include wavelength range (e.g., 600–700 nm) and breakdown voltage tolerance to meet specialized optical or environmental requirements.

Get inspired

With its avalanche gain mechanism, this photodiode amplifies weak light signals, enabling precise measurements in low-light scenarios. The silicon material ensures compatibility with standard electronics, while the low reverse current minimizes noise in sensitive applications like medical diagnostics or industrial sensing.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Breakdown Voltage160 V176 V (+10%)192 V (+20%)
Reverse Current55 pA44 pA (-20%)33 pA (-40%)
Gain Bandwidth50 MHz65 MHz (+30%)80 MHz (+60%)
Temperature Stability±2°C±1°C±0.5°C

Supplier's note

  1. Technical Breakthroughs:

    • The Pro Model’s 192 V breakdown voltage allows operation in harsher electrical environments than standard models.
    • Advanced Model’s 44 pA reverse current reduces noise by 20%, ideal for precision spectroscopy.
    • The Pro Model’s ±0.5°C stability ensures consistent performance in fluctuating temperatures.

  2. Optimal Version Selection:

    • Base Model: Suitable for general-purpose optical communication systems requiring standard sensitivity.
    • Advanced Model: Recommended for laboratory instruments needing reduced noise and expanded bandwidth.
    • Pro Model: Best for aerospace or industrial applications demanding extreme voltage tolerance and thermal stability.

With the Pro Model’s triple-industry-standard chemical resistance (noted in material specs), users can safely handle corrosive environments. Pair this with its low-temperature drift to ensure stable operation in outdoor deployments.

Frequently asked questions

  • Which Si APD model suits low light measurement analysis instruments?

  • How to store silicon photoelectric sensors to prevent degradation?

  • Why choose silicon over germanium for optical sensors?

  • Can the wavelength of the S12053-02 be customized for specific applications?

  • Is the APD certified for medical optical systems?

  • What applications use 650 nm wavelength photodiodes?

  • How does temperature affect the S12053-02’s performance?

  • What breakdown voltage specs ensure reliability in optical sensors?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
Breakdown Voltage (Vb)High-voltage optical systemsIndustry Standard: 150 V ▲ Our Base: 160 V ▲ Our Advanced: 180 VHigher Vb enables stable operation in harsher environments (e.g., industrial lasers)Requires specialized power supplies for Advanced versions (>180 V)
Reverse Current (Id)Low-noise sensing applicationsIndustry Standard: 100 pA ▲ Our Base: 55 pA ▲ Our Advanced: 30 pAUltra-low leakage current minimizes signal interference (55 pA @25°C, 650 nm)Advanced versions may require cryogenic cooling to maintain performance
Wavelength Sensitivity650 nm optical communication systemsIndustry Standard: 600–700 nm ▲ Our Base: 650 nm ▲ Our Advanced: 630–670 nmOptimized for red-light applications (e.g., laser rangefinders)Narrow bandwidth limits use in multi-wavelength systems (Base)
Operating Temperature RangeEnvironmental monitoring devicesIndustry Standard: 25°C ▲ Our Base: 0–50°C ▲ Our Advanced: -10–60°CBase model suits lab settings; Advanced handles outdoor/industrial extremesAdvanced versions may require thermal management for peak performance
Noise PerformanceMedical imaging systemsIndustry Standard: 45 dB ▲ Our Base: 50 dB ▲ Our Advanced: 55 dBHigher signal-to-noise ratio (50 dB) improves detection in low-light scenariosAdvanced noise reduction adds cost and complexity to circuit design
Packaging DurabilityField-deployable sensorsIndustry Standard: Basic moisture barrier ▲ Our Base: Enhanced ESD shield ▲ Our Advanced: Hermetic vacuum-sealed caseAdvanced packaging extends shelf life in humid environmentsVacuum-sealed packaging increases production time and cost

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