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Discrete Semiconductors
Diodes
  • VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar
  • VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar
  • VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar
  • VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar
  • VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar
  • VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar
VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar

VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar

  • >= 5000 Pieces
    $0.03

Customization:

Customized packaging（Min.Order: 100000 pieces）
View product details

VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • High-Speed Switching: Designed for efficient high-frequency signal processing and voltage regulation in electronic circuits, capable of handling up to 250V.
  • Through-Hole Mounting: Engineered for secure integration into PCBs, offering mechanical durability and ease of soldering in both prototyping and mass production.

Key features

  • 1. Material Technology

    • With a Silicon Epitaxial Planar structure, achieve superior durability and efficiency under high-voltage conditions. The copper metal leads ensure optimal electrical conductivity, while the high-temperature-resistant insulating material provides reliable heat dissipation and polarity identification through color coding (red/white).

  • 2. Interactive Design

    • With through-hole mounting, simplify installation for secure integration into PCBs, reducing mechanical stress. The color-coded polarity indicators eliminate wiring errors, ensuring proper circuit alignment during assembly.

  • 3. Performance Parameters

    • With high-speed switching capability, achieve faster response times compared to standard diodes*. The 250V voltage rating enables robust performance in demanding applications like power supplies and inverters.

  • 4. Scenario Solutions

    • Designed for PCB applications, this diode supports high-voltage environments in industrial and commercial electronics. Its compact design and polarity indicators make it ideal for complex circuits requiring precise current control and reverse-voltage protection.

  • 5. Certification Standards

    • While specific certifications are not listed, the product adheres to industry standards for electrical safety and reliability*. The materials and design comply with common regulatory requirements for electronic components.

Product details

VR 250V High Speed Switching Diode 1SS83 With Silicon Epitaxial Planar

The VR 250V High Speed Switching Diode 1SS83 is designed for high-frequency applications in PCB circuits, featuring silicon epitaxial planar technology for optimal performance. Its through-hole mounting ensures secure installation, while the red and white insulating base aids polarity identification and heat dissipation.

Technical specifications

FeatureSpecificationBenefit
MaterialCopper leads, high-temperature polymerEnhanced conductivity and thermal stability
Voltage Rating250V reverse voltageSafe operation in high-power circuits
Switching SpeedUltra-fast reverse recoveryReduces energy loss in AC/DC conversion
Mounting StyleThrough-holeEasy PCB integration and mechanical stability
Color CodingRed (anode)/White (cathode)Quick polarity identification

Customization guide

Adjustable parameters include lead length and packaging density to meet specialized PCB layout requirements. For high-voltage applications, consult our engineering team for custom voltage ratings.

Get inspired

Ideal for power supplies, inverters, and motor controllers, this diode combines speed and durability to optimize energy efficiency in high-frequency circuits.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Switching Speed50ns reverse recovery+15% faster+30% faster*
Voltage Rating250V300V400V
Power Handling1A peak1.5A2A

Supplier's note

  1. Technical Breakthroughs:

    • Silicon Epitaxial Planar Tech: Enables 30% faster switching than traditional diodes, reducing power loss.
    • 250V Reverse Voltage: Exceeds industry standards for automotive and industrial applications.
    • Through-Hole Design: Offers 2x mechanical stability compared to SMDs in vibration-heavy environments.

  2. Version Selection Guide:

    • Base Model: Best for standard PCB applications (e.g., consumer electronics) requiring reliable 250V operation.
    • Advanced Model: Suited for industrial inverters needing 15% faster switching and 300V tolerance.
    • Pro Model: Ideal for high-power systems (e.g., electric vehicles) with 400V ratings and 2A current handling.

Pro Model’s 400V rating triples the safety margin for automotive circuits, ensuring stable operation under extreme voltage spikes. Paired with its ultra-fast reverse recovery, it reduces heat generation by 40% in high-frequency converters.

Frequently asked questions

  • Which applications are best suited for the VR 250V High Speed Switching Diode 1SS83?

  • How does the silicon epitaxial planar design benefit the VR 250V diode?

  • Can the VR 250V diode handle high voltage in through-hole PCB applications?

  • What’s the difference between silicon epitaxial planar and other diode materials?

  • How to ensure proper polarity when installing the VR 250V diode?

  • Does the VR 250V diode meet safety certifications like UL or RoHS?

  • Can this diode be used in high-temperature environments?

  • Are there customization options for packaging or mounting styles?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
High-Speed Switching DiodesHigh-frequency power supplies, SMPS, inverters- Reverse Recovery Time: 5ns (IEC 60747-14) ▲+50% vs Industry Standard (10ns)
- Peak Reverse Voltage: 250V (IEC 60747-1) ▲+25% vs Industry Standard (200V)		- Faster switching reduces energy loss (▲+50% efficiency gain).
- Higher voltage tolerance for robust performance.		- Higher cost compared to standard diodes.
- Requires precise thermal management.
Schottky Barrier DiodesLow-voltage rectification, RF circuits- Forward Voltage Drop: 0.3V (IEC 60747-2) ▲-40% vs Industry Standard (0.5V)
- Leakage Current: 1μA (IEC 60747-2) ▲-90% vs Industry Standard (10μA)		- Minimal power loss at low voltages (ideal for battery systems).
- Low leakage improves signal integrity.		- Limited reverse voltage capability (<60V).
- Sensitive to temperature fluctuations.
Zener DiodesVoltage regulation, overvoltage protection- Zener Voltage Stability: ±5% (IEC 60747-4) ▲+20% vs Industry Standard (±6.5%)
- Power Dissipation: 1W (IEC 60747-4) ▲+50% vs Industry Standard (0.66W)		- Precise voltage reference (±5% tolerance).
- Handles ▲+50% more power than industry standards.		- Lower power handling limits high-current applications.
- Temperature-dependent performance.
Standard Rectifier DiodesAC/DC conversion in low-frequency circuits- Forward Voltage Drop: 0.7V (IEC 60747-1) (matches Industry Standard)
- Reverse Breakdown Voltage: 1000V (IEC 60747-1) (matches Industry Standard)		- Cost-effective and widely compatible.
- Stable under steady-state conditions.		- Higher power loss at high currents.
- Slow switching (not suitable for kHz+ frequencies).
Signal DiodesRF detection, signal modulation- Response Time: 1ns (IEC 60747-6) ▲+20% vs Industry Standard (1.25ns)
- Peak Forward Surge Current: 50A (IEC 60747-6) ▲+25% vs Industry Standard (40A)		- Fast response for high-frequency signals (▲+20% faster).
- Handles transient currents better (▲+25% surge capacity).		- Limited power handling for high-energy applications.
- Requires ESD protection.
PhotodiodesOptical sensing, fiber optics- Responsivity: 0.6A/W (IEC 60747-5) ▲+30% vs Industry Standard (0.46A/W)
- Rise Time: 10ns (IEC 60747-5) ▲+25% vs Industry Standard (13.3ns)		- ▲+30% higher sensitivity to light.
- Faster signal capture (▲+25% speed improvement).		- Requires bias voltage for optimal performance.
- Susceptible to ambient light noise.

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