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  • hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V
  • hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V
  • hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V
  • hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V
  • hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V
  • hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V
hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V

hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V

  • 1 - 99 Pieces
    $10.23
  • >= 100 Pieces
    $8.18

Customization:

Customized packaging（Min.Order: 1000 pieces）
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hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V

Product overview

Core functionalities

Applicable scenarios

Unique advantages

  • MOSFET Functionality: Designed as a high-side switch, this MOSFET is ideal for controlling the flow of current in high-voltage or high-power applications.
  • Surface-Mount Design: The compact surface-mount package ensures easy integration into printed circuit boards (PCBs) for efficient electronic assembly.

Key features

  • 1. Advanced Material Technology

    • With encapsulation in durable materials like plastic or ceramic, this MOSFET ensures protection from moisture and mechanical damage, enhancing longevity and reliability in electronic devices.

  • 2. Efficient Interactive Design

    • With a surface-mount design, you can easily integrate this MOSFET into printed circuit boards (PCBs), optimizing space and improving the efficiency of electronic assemblies.

  • 3. Superior Performance Parameters

    • With its high efficiency in switching applications, this MOSFET offers reliable power management, making it suitable for high-voltage and high-power electronic systems.

  • 4. Versatile Scenario Solutions

    • With its high-side switch capability, you can control current flow in power electronics, providing adaptable solutions for both home and commercial applications.

  • 5. Customizable Certification Standards

    • With customizable performance parameters such as voltage rating and current handling capacity, this MOSFET can be tailored to meet specific certification standards for diverse electronic systems.

Product details

hyst bom list service ic chip mosfet AUIRG4PH50S IGBT PT 1200V

Introducing the AUIRG4PH50S MOSFET, a new and original component ideal for high-side switching applications in power electronics. This single IGBT PT 1200V transistor is designed for efficient power management and control, featuring a robust through-hole mounting type for reliable integration into electronic systems.

Technical specifications

FeatureSpecificationBenefit
ConfigurationSingleOptimal for discrete power control
FET TypeN-channelHigh efficiency in switching applications
Mounting TypeThrough holeEnsures secure and stable installation
Packing TypeThrough holeSuitable for high-power applications

Customization guide

With adjustable voltage rating, current handling capacity, and switching speed, this MOSFET can meet specialized needs in various electronic systems, ensuring adaptability and performance optimization.

Get inspired

With its high efficiency and reliability, the AUIRG4PH50S MOSFET is perfect for power management solutions in modern electronic devices, enabling seamless integration and improved functionality.

Choose your model

ParameterBase ModelAdvanced ModelPro Model
Voltage Rating1200V1300V1400V*
Current Capacity15A17A20A*
Switching SpeedStandardFastUltra-fast*

Supplier's note

The Pro version's ultra-fast switching speed—30% faster than traditional models—ensures superior performance in high-frequency applications. When paired with its enhanced current capacity, this creates an ideal solution for demanding environments requiring efficient power control.

Guide users to optimal version selection based on application scenarios: The Pro model is tailored for high-performance applications requiring maximum reliability and efficiency, while the Base model provides a cost-effective solution for standard power management tasks.

Frequently asked questions

  • What model of MOSFET is best for high-side switching in power electronics?

  • How do I ensure the longevity of my AUIRG4PH50S MOSFET component?

  • What are the advantages of the AUIRG4PH50S MOSFET's surface-mount design?

  • Can the AUIRG4PH50S MOSFET be customized for specific applications?

  • Is the AUIRG4PH50S MOSFET suitable for high-reliability applications?

  • How does the AUIRG4PH50S MOSFET contribute to energy efficiency?

  • What materials are used in the construction of the AUIRG4PH50S MOSFET?

  • Are there any specific labeling features on the AUIRG4PH50S MOSFET?

Product comparison

CategoryUsage ScenariosCharacteristicsAdvantagesDisadvantages
MOSFETsPower Management in ElectronicsSurface-Mount Design (compact integration)High Efficiency (saves energy)Limited Power Handling (compared to IGBTs)
IGBTsHigh-Power Applications1200V Voltage Rating (handles high voltage)High Current Handling (suitable for motors)Slower Switching Speed (compared to MOSFETs)
High-Side SwitchesAutomotive Power SystemsEncapsulated Design (protection from elements)Reliable Operation (reduces failure rates)Requires Heat Management (due to power loss)
Surface-Mount DevicesCompact PCB IntegrationEasy Assembly (reduces board space)Fast Production (streamlines manufacturing)Requires Precision Soldering (complex assembly)
Custom MOSFET PackagesSpecific Circuit ApplicationsCustomizable Parameters (tailored performance)Adaptable Solutions (fits varied needs)Higher Cost (due to customization)
N-Channel MOSFETsSwitching and AmplificationEfficient Current Flow (better conductivity)Faster Switching (improves response time)Can be Prone to Overheating (needs cooling)

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