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Ready to ShipThe IR2110 is a high- and low-side output voltage variable electronic part. Thus, it controls power devices in driver applications like motor control systems, power inverters, and more.
This half-bridge driver has an internal charge pump, adding a capacitive trickle that allows the IC to generate the required bootstrap voltage. Therefore, it makes a stable control signal driving the power transistors even when the supply voltage drops low.
The bootstrap output voltage offers a typical peak voltage of about 0.9 V above the high-side switch in a half-bridge configuration. This bootstrap circuit connects a diode and capacitor that provides the necessary gate drive for the high-side MOSFET.
The IR2110 can work with pulse-width modulated signals of up to 20 kHz. This means it can control power devices at a low modulation and respond better at high frequencies. This makes it suitable for widely used applications like motor control, power inverters, and more.
Furthermore, 20 kHz/20 k counts per second/1000 mV input/load = 0.1127 mV is better than the 20 Hz at the first frequency setting, representing the percentage of 20 but will not represent all frequencies and counts.
The IR2110 remains functional at a temperature between -40 and +125°C. In addition, it can work well within a supply voltage range of 10 to 20 V.
Thus, these features ensure that the IR2110 performs effectively in various environments and under different loads.
When selecting the IR2110 electronic part for various applications, consider the following key factors:
Determine whether the design needs high-side and low-side control. The IR2110 is excellent for driving both sides of a power switch in half-bridge and full-bridge designs.
Check the current handling of the circuit. The IR2110 is designed for high-power applications; thus, depending on the load current level, one might need to select a suitable driver.
The IR2110 uses a bootstrap method to drive high-side MOSFETs. So, ensure the bootstrap circuit is correctly implemented. In addition, the IR2110 makes driving the high-side transistor easier, especially in high side connected to high voltage.
The high-side p-channel MOSFET connects to the power supply, while the low side n-channel MOSFET is connected to ground. Therefore, the high-side driver is a floating output that drives a high-side MOSFET. It has an internal charge pump that needs to be properly arranged.
The IR2110 can drive high efficient power designs with duty cycles up to 90% and operating frequencies up to 100 kHz. Therefore, this makes it suitable for applications where power efficiency is a concern, such as inverters and motor drives.
So, consider the application's power effectiveness and whether the IR2110 can meet the required efficiency standards.
The IR2110 is typically used for operational mode. A different IC is better suited for standby mode since it's not usually active in standby mode, and one needs to select ICs appropriate for low power/less heat.
Consider the temperature range the circuit will experience. The IR2110 works within the -40°C to +125°C range, making it ideal for applications in extreme environments.
The first step in using the IR2110 is to ensure the proper application circuit, as the various common configurations will include half-bridge and full-bridge. Each part should be connected to a common point to form a half-bridge with an upper high-side and lower low-side transistor.
Various common configurations, such as half-bridge and full-bridge, should be considered while connecting the circuit. In addition, ensure correct connections to the IR2110 for high side and low side control.
The IR2110 requires a supply voltage between 10 V to 20 V. Thus, apply an appropriate voltage to the high-side and low-side circuit to avoid damaging the device due to over-voltage or under-voltage conditions.
Also, ensure proper connection between the bootstrap capacitor and the high-side MOSFET to maintain the correct operation of the high side.
The IR2110 uses two input signals. The input signals from the low-side and high-side should be PWM modulated signals with the device's duty cycle and frequency requirements. Ensure the inputs are adequately driven; use high-impedance sources to avoid loading the IR2110 inputs.
Bootstrap capacitor value should be properly selected for different applications. A too-small capacitor will cause insufficient gate drive, while a too-large capacitor will slow down the system response. Therefore, the capacitor value should be based on the application needs and the MOSFETs used.
The output HTL and OTL should be monitored to ensure that the device works correctly and the outputs maintain the correct voltage level. An oscilloscope can check the output waveforms to ensure the IR2110 is working correctly.
The high-side p-channel MOSFET should be connected to the power supply, while the low-side n-channel MOSFET should be grounded for better performance.
For optimal performance and to reduce switching losses, the power components' distribution of the IR2110 should be close to the associated components. This ensures lower loop inductance and faster switching time.
A1. The IR2110 is widely used in halfbridge/mosfet driver applications like motor control, power inverters, and high-precision electronic devices. It controls both high- and low-side MOSFETs in a half-bridge configuration.
A2. The IR2110 has a floating high-side driver with an internal charge pump, PWM input, and great bootstrapping capability. In addition, the versatility and strong drive capabilities make it suitable for various power applications.
A3. The bootstrap circuit generates the gate drive for a high-side MOSFET. However, the IR2110 uses a built capacitor to maintain the gate of the high-side MOSFET at a higher potential than the source.
A4. Halfbridge drivers in motor control, power inverters, and other high-power systems where effectively controlling two complementary switches are suitable. The IR2110 can easily drive both high-side and low-side transistors.
